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Molybdenum disulfide (MoS2), a two‐dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS2, remains a notable challenge. Here, an in‐situ defect engineering approach for monolayer MoS2 using a pressure‐dependent chemical vapor deposition (CVD) process is presented. Monolayer MoS2 grown in a low pressure CVD conditions (LP‐MoS2) produces sulfur vacancy (Vs) induced defect‐rich crystals primarily attributed to the oxygen‐deficient growth conditions. Conversely, atmospheric pressure CVD‐grown MoS2 (AP‐MoS2) passivates these defects with oxygen from ambient conditions. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP‐MoS2 shows a drastically enhanced photoluminescence, which is significantly quenched in LP‐MoS2 attributed to in‐gap electron donor states induced by the Vs defects. However, the n‐doping induced in LP‐MoS2 generates enhanced photoresponsivity and detectivity in fabricated photodetectors compared to the AP‐MoS2‐based devices. Defect‐rich LP‐MoS2 outperforms AP‐MoS2 as channel layers of field‐effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single‐step CVD approach for in situ defect engineering in monolayer MoS2 and presents a pathway to control defects in other monolayer 2D materials. [ABSTRACT FROM AUTHOR]

Crystallization of alloys from a molten state is a fundamental process underpinning metallurgy. Here the direct imaging of an intermetallic precipitation reaction at equilibrium in a liquid‐metal environment is demonstrated. It is shown that the outer layers of a solidified intermetallic are surprisingly unstable to the depths of several nanometers, fluctuating between a crystalline and a liquid state. This effect, referred to herein as crystal interface liquefaction, is observed at remarkably low temperatures and results in highly unstable crystal interfaces at temperatures exceeding 200 K below the bulk melting point of the solid. In general, any liquefaction process would occur at or close to the formal melting point of a solid, thus differentiating the observed liquefaction phenomenon from other processes such as surface pre‐melting or conventional bulk melting. Crystal interface liquefaction is observed in a variety of binary alloy systems and as such, the findings may impact the understanding of crystallization and solidification processes in metallic systems and alloys more generally. [ABSTRACT FROM AUTHOR]

[Display omitted] • Successful manufacture of Ti-Cu-Fe alloys using direct energy deposition. • The bainitic microstructure is produced by non-lamellar eutectoid decomposition. • The Ti-alloys consist of α- and β- phase and Ti 2 Cu at their interface. • High strength is achieved through multiple strengthening mechanisms. Novel ternary titanium alloys with a bainitic microstructure have been designed specifically for additive manufacturing (AM). The Ti-xCu-yFe alloys take advantage of constitutional supercooling to suppress the growth of large columnar grains usually associated with AM Ti alloys. In the as-built condition the bainitic microstructure consists of a refined α-phase within a matrix of β-phase. The intermetallic phase, Ti 2 Cu, forms predominantly on the interface of the α- and β-phase and within the β matrix. The high strength of these materials is attributed to the refined α-phase and Ti 2 Cu particles as well as significant solid solution hardening. This work demonstrates a viable way to fabricate structural components with unique and excellent properties using low-cost elemental powders with AM. [ABSTRACT FROM AUTHOR]