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Abstract: Novel tungsten precursors, WH2(iPrCp)2 and WH2(EtCp)2, with attractive thermal properties are introduced for Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) of tungsten containing films. Their thermal behavior has been assessed using a vapor pressure measurement set-up and a thermal gravimetric apparatus (TG/DSC/DTA). Thin films of WC x and WN x C y were deposited depending on the reactant used. Kinetics of the surface reaction using WH2(iPrCp)2 precursor has been evaluated carrying out MOCVD at low temperature ranging 350 °C to 400 °C. On-line QMS analysis of the deposition process was used to characterize the precursor decomposition pathway. Physical and electrical properties of the films were evaluated by X-Ray Reflectrometry (XRR), X-Ray Diffraction (XRD), X-Ray Photoelectron Spectroscopy (XPS), Secondary Ions Mass Spectrometry (SIMS), and four-point probe. Oxygen containing, porous and amorphous WC x (x ∼0.5) and WN x C y (x ∼0.4, y ∼0.2) thin films have been achieved. [Copyright &y& Elsevier]