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Superconducting c-axis-oriented Sr2RuO4 thin film has been fabricated using pulsed laser deposition. Although the superconductivity is localized, the onset critical temperature is enhanced over the bulk value. X-ray microstructural analysis of Sr2RuO4 superconducting and non-superconducting thin films suggests the existence of the localized stacking faults and an overall c-axis lattice expansion which may account for the locally enhanced superconductivity. [ABSTRACT FROM AUTHOR]

A novel rf sputtering technology in which a high density plasma is created in a remote chamber has been used to reactively deposit zinc oxide (ZnO) and indium zinc oxide (IZO) thin films at room temperature from metallic sputtering targets at deposition rates [?]50 nm min[?]1, which is approximately an order of magnitude greater than that of rf magnetron sputtering. Thin film transistors have been fabricated using IZO with a maximum processing temperature of 120 degC, which is defined by the curing of the photoresist used in patterning. Devices have a saturated field effect mobility of 10 cm2 V[?]1 s[?]1 and a switching ratio in excess of 106. Gate bias stress experiments performed at elevated temperatures show a consistent apparent increase in the field effect mobility with time, which is attributed to a charge trapping phenomenon. [ABSTRACT FROM AUTHOR]