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Recent advancements in 3D printing technology have expanded its application to manufacturing pressure sensors. By harnessing the cost‐effectiveness, streamlined processes, and design flexibility of 3D printing, sensor fabrication can be customized to meet specific performance needs. Thus far, 3D printing in pressure sensor development has been primarily limited to creating molds for transferring patterns onto flexible substrates, restricting both material selection and sensor performance. To fully unlock the potential of 3D printing in advanced pressure sensor fabrication, it is crucial to establish effective design rules focused on enhancing the figure of merit performance. This study introduces a universal design strategy aimed at maintaining high sensitivity across a wide pressure range—a challenging feat, as sensitivity significantly decreases at higher pressures. Our approach centers on engineering the deformability of 3D‐printed structures, achieving a linear increase in contact area between sensor patterns and electrodes without reaching saturation. Sensors designed with high elongation and low stiffness exhibit consistent sensitivity of 162.5 kPa⁻¹ across a broad pressure range (0.05–300 kPa). Mechanistic investigations through finite element analysis confirm that engineered deformability is key to achieving this enhanced linear response, offering robust sensing capabilities for demanding applications such as deep‐sea and space exploration. [ABSTRACT FROM AUTHOR]

Satellite observations have become increasingly important in scientific studies of the Earth's climate, especially for oceanographic science. A next generation sensor known as the Ocean Color Instrument (OCI) was launched in February 2024 onboard the Plankton, Aerosol, Cloud, and ocean Ecosystem (PACE) platform, and will extend the data set of on-orbit scientific observations used for ocean and atmospheric science research. Delivering high quality data from a space-borne sensor requires the instrument to be well calibrated; while much of the calibration can be performed on-orbit, some aspects of the calibration must be measured or the mechanisms verified pre-launch. One aspect of the OCI calibration that is novel to its design (for a space-based sensor) is its ability to perform linearity measurements on orbit. When viewing the Sun reflected off a dim diffuser with ∼2–3% reflectance, the sensor is capable of recording successive pixels with increasing integration times. The result is a series of light levels measured from the same source in a given scan line. These measurements are then used to assess the linearity. During the pre-launch test campaign, this mechanism was verified using a known source in the Earth view portion of the scan. Results from these tests form a baseline that was verified once on-orbit (and the calibration may be replaced if the linearity is shown to change). The linearity measured both prior to launch and post-launch will be assessed in this work. [ABSTRACT FROM AUTHOR]

A linear high‐sensitivity response is crucial for flexible electronic skin, particularly in precision detection for applications like intelligent robotics and human‐machine interactions. Prevailing strategies typically adopt a layered, multifaceted material design to cultivate this response, yet this approach often culminates in a diminished capacity to augment sensing stability. The root causes of these limitations are predominantly material mechanical mismatches and interface incompatibilities inherent in these designs. To address these challenges, an electromechanical integration strategy is introduced that simultaneously enhances linear highsensitivity and stability. This strategy is centered on constructing a robust, integrated mechanical and electrical interface within a polyurethane material system through an in situ growth and adhesion process. The iontronic pressure sensor exhibits a linear high‐sensitivity response (16.24 kPa−1, R2 = 0.999) within a wide range (0–300 kPa). Moreover, the sensor's integrated structure, self‐encapsulated through the adhesion between the electrode and dielectric layers, exhibits robust stability, even under complex mechanical stresses. The applications of the sensors in precision weighing and haptic feedback within intelligent gripping systems demonstrate their advantages of both linearity and stable sensing. This work delineates a strategic pathway for the fabrication of high‐performance flexible pressure sensors, contributing significantly to the field of advanced sensing technologies. [ABSTRACT FROM AUTHOR]

ABSTRACT In this paper, the iCGF−1 mode is proposed to compensate the amplitude‐to‐amplitude modulation (AM/AM) distortion of the traditional continuous class F−1 mode while maintaining the high efficiency. The AM/AM profile of the iCGF−1 mode is mathematically expressed simultaneously as a function of the input nonlinearity parameter γ$$ \gamma $$ and conduction angle α$$ \alpha $$, which makes the iCGF−1 mode more flexible in controlling the AM/AM profile. The first inflection point of the AM/AM profile can be moved to a higher output power level through theoretical deduction by adjusting the second harmonic source impedance Z2S$$ {Z}_{2S} $$ and gate bias voltage to increase the values of γ$$ \gamma $$ and α$$ \alpha $$. This flattens the AM/AM profile while the efficiency profile remains almost the same as that of the traditional continuous class F−1 mode. The performance of the iCGF−1 mode is verified through simulation and experimental measurements. The iCGF−1 PA is fabricated with CGH40010F and has a frequency range of 2–2.6 GHz. The drain efficiency is 70.1%–77.9%, and the output power is 41.1–41.7 dBm. The linearity is tested with a 100 MHz 5G NR signal (the peak average power ratio (PAPR) is 8.5 dB) at 2.3 GHz. The worst adjacent channel power ratio (ACPR) is −32.3 dBc without digital predistortion (DPD) and −52.1 dBc with DPD. The results show that the iCGF−1 mode has successfully compensated the AM/AM distortion of the traditional continuous class F−1$$ {}^{-1} $$ mode and maintaining high efficiency. [ABSTRACT FROM AUTHOR]

Given the increasing application of eddy current sensors for measuring turbine tip clearance in aero engines, enhancing the performance of these sensors is essential for improving measurement accuracy. This study investigates the influence of coil shape on the measurement performance of planar eddy current sensors and identifies an optimal coil shape to enhance sensing capabilities. To achieve this, various coil shapes—specifically circular, square, rectangular wave, and triangular wave—were designed and fabricated, featuring different numbers of turns for the experiment at room temperature. By employing a method for calculating coil inductance, the performance of each sensor was evaluated based on key metrics: measurement range, sensitivity, and linearity. Experimental results reveal that the square coil configuration outperforms other shapes in overall measurement performance. Notably, the square coil demonstrated a measurement range of 0 mm to 8 mm, a sensitivity of 0.115685 μH/mm, and an impressive linearity of 98.41% within the range of 0 mm to 2 mm. These findings indicate that the square coil configuration enhances measurement capabilities. The conclusions drawn from this study provide valuable insights for selecting coil shapes and optimizing the performance of planar eddy current sensors, thereby contributing to the advancement of turbine tip clearance measurement techniques in aero engines. [ABSTRACT FROM AUTHOR]

This study illustrates the simulation and mathematical analysis of a square diaphragm-comb structure capacitive pressure sensor (SD-CSCPS). The detection of pressure ranges between 10 MPa and 100 MPa with linear output to the applied pressure is the primary emphasis of this research work. In this study, four square diaphragms of same length and breadth with different thickness of 25 µm, 30 µm, 35 µm and 45µm are studied. The construction and design method of a SDCSCPS using a diaphragm are laid out step-by-step in the design chart. In this study, the square diaphragm is deflected due to applied pressure. This deflection is converted into linear displacement by a mechanical coupler so that the sensor output characteristic can be linearized. The analytical model has two components: the deflection model and the charge model. The deflection of the square diaphragm is computed in deflection model, as this deflection is used to move the movable comb structure. It is highly challenging to determine the absolute capacitance for such a complex construction; instead, the shift in capacitance is calculated in the charge model. The proposed 3D model of the SD-CSCPS was developed and simulated using COMSOL Multiphysics, which also validates the analytical model of SD-CSCPS. Among the various parameters that can increase SD-CSCPS sensitivity are the physical dimensions of the diaphragm, the number of interdigitated fingers of the comb, the dimension of the interdigital finger, the gap between the movable and stationary plates, Poison's ratio, and Young's modulus. In this study, the maximum sensitivity of the sensor with a diaphragm of 25 µm was determined. The simulated and calculated sensitivity of the SD-CSCPS for a diaphragm thickness of 25 µm are 0.253 fF/MPa and 0.319 fF/MPa, respectively. [ABSTRACT FROM AUTHOR]

GaN high electron mobility transistor (HEMT)‐based low noise amplifiers (LNAs) are an integral part of microwave receiver systems to enhance signal‐to‐noise ratio (SNR). The noise of LNA itself becomes critical for systems requiring high SNR, such as imaging and satellite communication systems. This paper discusses the design of a three‐stage LNA operating at the X‐band in the frequency range of 8.0–12.0 GHz. The amplifier's design and small signal, noise, and linearity characterizations are discussed. Stagewise analysis for gain, noise figure (NF), and matching network losses at the design stage results in achieving promising results. The proposed LNA provides a gain of 23.2 dB with ± 1.0 $\pm \ 1.0$ dB gain ripple. Its NF is below 1.5 dB, output power at 1 dB gain compression is 16.4 dBm, and third‐order intercept point is 24.7 dBm at 10 GHz. LNA's survivability is validated to input stress as high as 42 dBm. This LNA is the best reported NF and survivability combination in the 8.0–12.0‐GHz frequency range. The reverse recovery time of LNA is measured under two different pulse conditions, and it has been shown that LNA has better recovery times for lower pulse width signals. This LNA finds its applications in radars and satellite communication systems. [ABSTRACT FROM AUTHOR]

Quantile-quantile plots in the precise sense of scatterplots showing corresponding quantiles of two variables have long been supported by official command qqplot. That command is generalized here in several ways in a new command, qqplotg. In this article, I explain the major features of qqplotg and give several examples of its use. Themes include the use of quantile-quantile plots to explore the possibilities for working on a transformed scale and the value of plotting difference between quantiles versus mean quantile or plotting position. Various historical and methodological remarks are sprinkled throughout. [ABSTRACT FROM AUTHOR]

This article is concerned with the assumption of linear temporal development that is often advanced in structural equation modeling-based longitudinal research. The linearity hypothesis is implemented in particular in the popular intercept-and-slope model as well as in more general models containing it as a component, such as longitudinal structural models with covariates, or models for the study of predictors and correlates of change. In empirical research applications, currently behavioral and social scientists typically evaluate only overall goodness of fit for a considered model. However, this omnibus fit assessment may miss violations of the underlying linearity assumption. To respond to this limitation, the present article discusses a testing procedure for examining the hypothesis of linear growth or decline separately from the widely used overall fit evaluation process. The method is readily utilized with popular latent variable modeling software and is illustrated using a numerical example. [ABSTRACT FROM AUTHOR]

In this computer simulation study, we examine four different statistical approaches of linearity assessment, including two variants of deviation from linearity (individual (IDL) and averaged (AD)), along with detection capabilities of residuals of linear regression (individual and averaged). From the results of the simulation, the following broad suggestions are provided to laboratory practitioners when performing linearity assessment. A high imprecision can challenge linearity investigations by producing a high false positive rate or low power of detection. Therefore, the imprecision of the measurement procedure should be considered when interpreting linearity assessment results. In the presence of high imprecision, the results of linearity assessment should be interpreted with caution. Different linearity assessment approaches examined in this study performed well under different analytical scenarios. For optimal outcomes, a considered and tailored study design should be implemented. With the exception of specific scenarios, both ADL and IDL methods were suboptimal for the assessment of linearity compared. When imprecision is low (3 %), averaged residual of linear regression with triplicate measurements and a non-linearity acceptance limit of 5 % produces <5 % false positive rates and a high power for detection of non-linearity of >70 % across different types and degrees of non-linearity. Detection of departures from linearity are difficult to identify in practice and enhanced methods of detection need development. [ABSTRACT FROM AUTHOR]

We develop low-order triangular virtual elements for linear Kirchhoff–Love shells from an engineering point of view. Flat element geometry is considered, which enables a direct shell discretization with no need for a curvilinear coordinate system or predefined initial mapping. Along with the assumed linearity of the problem, the superposition of the uncoupled membrane and plate energies is performed by unifying aspects of the virtual element method when applied to linear two-dimensional elasticity and plate bending problems. We explore low-order cases, namely linear to quadratic membrane displacements and quadratic to cubic deflection polynomial approximations such that no internal degrees of freedom are needed. For all elements, a single stabilization available in the literature is employed to stabilize the element formulations. Numerical examples of static problems show that the presented formulation is capable of solving complex shell problems. Possible extensions are discussed in future works. [ABSTRACT FROM AUTHOR]

Hydrogen recirculation ejectors are commonly used to achieve anode exhaust recirculation in proton exchange membrane fuel cell systems to obtain higher fuel efficiency. By adopting variable-nozzle designs in traditional fixed-nozzle ejectors, recirculation rates under low loads and the operating range of ejectors can both be improved. In this study, the design methods of different variable-nozzle structures for a 40 kW-grade ejector are proposed. A 2D numerical model is subsequently constructed and experimentally validated to investigate the influence of nozzle structures, needle profiles and needle protrusion length on entraining performance and control linearity. The results indicate that the variable-nozzle designs take greater effects at lower loads in increasing the entrainment ratio. Convergent nozzles with short throats are optimal for variable-nozzle ejectors due to their more significant and linear performance improvement. Adopting frustum needles or radical-function needles further enhances the linearity to over 0.96 across all power levels, but increasing needle diameters results in a reduction in the entrainment ratio. Additionally, the maximum needle insertion depth should be kept below 5.0 mm to minimize performance loss caused by excessive needle protrusion. • A convergent nozzle with a short throat is optimal for variable-nozzle designs. •Frustum needles and radical-function needles both significantly improves the control linearity. •Increasing needle diameters or protruding length leads to the reduction in entraining ability. •The needle insertion depth should be kept below 5.0 mm to minimize performance loss. [ABSTRACT FROM AUTHOR]

In this article, we explore patterns of R2 across data sets to reveal a fundamental equivalence. If any set of bivariate data is rotated, the R2 value changes and defines a curve as a function of the rotation angle θ. We show that for any data set whose rotated R2 curve has the same maximum value, the entire curve is identical up to a shift in the rotation angle. We also find that a recently introduced measure of linearity, Q2, provides a definitive relation between these data sets, with equal Q2 values resulting in identically rotated R2 curves. Finally, we also show that we can consider R2 as the combination of two components, the linearity of the data and a rotation angle. While rotating data or axes for non spatial data loses the specific meaning of the variables, these results may provide additional understanding of the relationships within the data and can reveal similarities between data sets, the role of sensitivity in correlation, and the nature of correlation itself. [ABSTRACT FROM AUTHOR]

This paper presents a detailed design of a broadband power amplifier (PA) utilizing 0.18-μm CMOS technology, operating in the frequency range of 2–5 GHz. This ultra-wideband (UWB) power amplifier uses a cascode topology with current reuse to enhance gain over the desired frequency band, utilizing an inductive source degenerate design to achieve the best linearity and output power and gain while maintaining a wide bandwidth. The inductive source degenerate adopts bondwire and microstrip line design. The paper includes extensive analysis, simulation results, and measurements to verify the performance of the amplifier and demonstrate its suitability for broadband power amplifier applications. The measured results for the proposed UWB power amplifier show excellent performance, with an impressive third-order input intercept point (IIP3) ranging from 15 to 18.7 dBm over the frequency range of 2–5 GHz. The output third-order intercept point (OIP3) ranges from 33 to 35 dBm. Additionally, the gain flatness is specified as 12.5 ± 1.5 dB. The reverse isolation is greater than or equal to − 40 dBm. The PA has a P1dB output power (OP1dB) of 10.2 dBm at 3 GHz, 9.2 dBm at 4 GHz, and 9.2 dBm at 5 GHz, respectively. The PA has a P1dB power-added efficiency of 30.5% at 3 GHz, 23% at 4 GHz, and 22% at 5 GHz with a 50 Ω load termination. The power dissipation is 33.3 mW at a supply voltage of 1.8 V. In addition, the PA has an excellent small group delay variation of ± 65 ps. The chip area is 1.01 × 1.08 mm2, including the pads. The proposed UWB PA demonstrates exceptional linearity, efficiency, and group delay in the 2–5 GHz frequency band. [ABSTRACT FROM AUTHOR]

This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on‐wafer DC and RF measurements up to 50 GHz. With a high ION/IOFF ratio (1.21 × 107) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of Vgs has been achieved for the tested device. Furthermore, the input intercept and higher‐order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest fT and fmax values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability. [ABSTRACT FROM AUTHOR]

This study investigates the luminescent properties and dosimetric potential of YCa 4 O(BO 3) 3 :0.5%Sm3+ phosphor synthesized via the combustion method. Dose-response investigations unveil a noteworthy linear increment in thermoluminescence (TL) intensity, emphasizing a remarkable linearity spanning a broad dose range from 0.1 to 300 Gy. Unusual heating rate effects are explored, revealing a shift in TL glow curve peak temperature (i.e 200 °C) towards higher temperatures with increasing heating rate. Speculative models, including Kinetic Trapping Effect, Thermal Quenching Compensation, and Defect Activation Energy Changes, are proposed. The study employs the T max - T stop method to identify characterize glow curve peaks, and the Initial Rise method for the low-temperature segment analysis, revealing seven distinct trap levels at various depths within the bandgap. Glow curve deconvolution using the Complex Glow Curve Deconvolution (CGCD) method delineates a multi-peak structure, offering valuable insights into luminescent mechanisms. The model exhibits a Figure of Merit (FOM) of 1.71%, within an acceptable range, affirming its reliability. However, interpretation of the activation energy and frequency factor values suggests intricate site processes, necessitating a nuanced analysis to understand the material's luminescent characteristics. The YCa 4 O(BO 3) 3 :0.5%Sm3+ phosphor demonstrates promising characteristics for precise dosimetry, with linear dose response, absence of saturation effects, and intriguing heating rate behavior. [ABSTRACT FROM AUTHOR]

The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theory of APDs, suggesting that APD linearity can be enhanced by suppressing the electrode size effect. A physical model was developed to explain this phenomenon, which is attributed to charge accumulation at the edge of the contact layer. Therefore, we proposed an improved APD design that incorporates an additional gap layer and a buffer layer to stabilize the internal gain under high-current-density conditions, thereby enhancing linearity. Our improved APD design increases the linear threshold for optical input power by 4.46 times. This study not only refines the theoretical model for APD linearity but also opens new pathways for improving the linearity of high-speed optoelectronic detectors. [ABSTRACT FROM AUTHOR]

Purpose: To validate a UV-visible spectrophotometric technique for evaluating niclosamide (NIC) concentration in different media across various values of pH. Methods: NIC was investigated using a UV-visible spectrophotometer in acidic buffer solution (ABS) of pH 1.2, deionized water (DW), and phosphate buffer solution (PBS), pH 7.4. The characterization of NIC was done with differential scanning calorimeter (DSC), powder X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). The UV analysis was validated for accuracy, precision, linearity, and robustness. Results: The DSC spectra showed a single endothermic peak at 228.43 °C (corresponding to the melting point of NIC), while XRD and FTIR analysis confirmed the identity, crystallinity and purity of NIC. In all media, the measured concentration of NIC was within ± 5 % of the actual value, which confirmed accuracy. The percentage relative standard deviation values were < 1 %, reflecting the precision of the method. The range of concentration measured was between 2 and 24 µg/mL, and all coefficient of determination (R²) values were > 0.99, indicating the linearity of the established analytical method. The limit of detection (LOD) and limit of quantification (LOQ) values were 0.122 and 0.407 µg/mL in ethanol, 0.530 and 1.766 µg/mL in ABS (pH 1.2), 0.224 and 0.747 µg/mL in DW, and 0.798 and 2.662 µg/mL in PBS, pH 7.4. The robustness was confirmed as the measured concentration under slight changes in temperatures and wavelengths were insignificant (p > 0.05). Conclusion: Based on the results above, the UV-visible spectrophotometric method under investigation was validated to be accurate, precise, linear, and robust in all the different media for the determination of NIC. [ABSTRACT FROM AUTHOR]

The burgeoning interest in non-classical MOSFET devices for low power applications and their latest incorporation in the newer technology node necessitate a study of Negative Capacitance Field Effect Transistors (NCFETs) in Radio Frequency applications. This work explores the comparative analysis of RF/analog performance of single gate NCFET (SG-NCFET) and highly doped double pocket double gate NCFET (HDDP-DG-NCFET) using performance parameters such as cut-off frequency (fT), transconductance frequency product (TFP) and transconductance generation factor (TGF). The Metal Ferroelectric Insulator Semiconductor based HDDP-DG-NCFET excels SG-NCFET in terms of enhanced performance in TGF and TFP. In addition, several important distortion parameters, such as intermodulation distortion and linearity, are also investigated for these devices. The behavior of distortion and linearity indices such as gm2, gm3 (higher-order transconductance), IIP3 (3rd order power-intercept point), higher order voltage intercept points (VIP2 and VIP3), 1 dB compression point, and total harmonic distortion is analyzed, which shows that HDDP-DG-NCFET exhibits distortion less performance. The influence of ferroelectric thicknesses and temperature on the RF/analog and linearity performance are also explored and described. The HDDP-DG-NCFET exhibits an ON current of 2.1 × 10−3 A/ μ m, current switching ratio of 0.79 × 1010, gm of 18.9 mS, fT of 2.65 THz, TFP of 64 THz/V, which is 55.56%, 111.27 times, 134.79%, 55.88%, 255.56%, respectively higher than SG-NCFET device. In addition, the subthreshold swing and OFF current of HDDP-DG-NCFET are 25.5 mV/decade and 2.65 × 10−13 A/ μ m, which is lesser than SG-NCFET. Moreover, it is witnessed that as the temperature rises from 250 to 400 K, RF/analog metrics are worsened while the linearity performance parameters are enhanced. Furthermore, it is observed that the proposed HDDP-DG-NCFET is linear compared to SG-NCFET with a lower magnitude of higher-order harmonics. Finally, these findings reveal that at lower voltages, HDDP-DG-NCFET outperforms SG-NCFET, evincing potential use of the same in RF applications. [ABSTRACT FROM AUTHOR]

The present work aimed to develop a suitable, specific, simple, precise, robust, and reproducible analytical method using RP-HPLC for simultaneous estimation of Ipratropium bromide and Mometasone furoate. The separation was carried out using mobile phase Acetonitrile: Phosphate buffer (pH modified up to 3.7 by orthophosphoric acid) in the ratio of 50:50 % v/v at 1 ml/min flow rate and detection was carried out at 210 nm. The method was validated by determining system specificity, selectivity, suitability, linearity, precision, accuracy, robustness, and LOQ-LOD as per ICH Q2 (R1) guidelines. The developed method was found to be suitable for the routine quantitative analysis of Ipratropium bromide and Mometasone furoate in bulk and pharmaceutical dosage forms. It was also concluded that the developed method was accurate, precise, linear, reproducible, robust, and sensitive. [ABSTRACT FROM AUTHOR]

This study examines the linear order of the narrative figures that appear in the frescoes of the Cycle of Saint Francis in the Upper Church of the Basilica of Saint Francis in Assisi, Italy (1288–1297). This linguistic analysis of the visual-pictorial modality explores the distribution of thematic and discourse roles as an authorly tool to express meaning. Findings include that the linear order of figures in the frescoes is patterned according to semantic principles and has been used here to convey particular relations, roles and other semantic information. Findings of this analysis can be fruitful both for the field of Art History and that of Linguistics, by offering insights into the potential application of linguistic patterning in narrative imagery, into the functions of artworks in this period, and how they combine their aesthetic, theological and communicative functions. The interdisciplinary methodology proposed here pioneers a new field of academic inquiry, for which future directives are provided. [ABSTRACT FROM AUTHOR]

Purpose: The primary aim of this paper is to present a novel design approach for a ring voltage-controlled oscillator (VCO) suitable for L-band applications, whose oscillation frequency is less sensitive to power supply variations. In a few decades, with the advancement of modern wireless communication equipment, there has been an increasing demand for low-power and robust communication systems for longer battery life. A sudden drop in power significantly affects the performance of the VCO. Supply insensitive circuit design is the backbone of uninterrupted VCO performance. Because of their important roles in a variety of applications, VCOs and phase locked loops (PLLs) have been the subject of significant research for decades. For a few decades, the VCO has been one of the major components used to provide a local frequency signal to the PLL. Design/methodology/approach: First, this paper chose to present recent developments on implemented techniques of ring VCO design for various applications. A complementary metal oxide semiconductor (CMOS)-based supply compensation technique is presented, which aims to reduce the change in oscillation frequency with the supply. The proposed circuit is designed and simulated on Cadence Virtuoso in 0.18 µm CMOS process under 1.8 V power supply. Active differential configuration with a cross-coupled NMOS structure is designed, which eliminates losses and negates supply noise. The proposed VCO is designed for excellent performance in many areas, including the L-band microwave frequency range, supply sensitivity, occupied area, power consumption and phase noise. Findings: This work provides the complete design aspect of a novel ring VCO design for the L-band frequency range, low phase noise, low occupied area and low power applications. The maximum value of the supply sensitivity for the proposed ring VCO is 1.31, which is achieved by changing the VDD by ±0.5%. A tuning frequency range of 1.47–1.81 GHz is achieved, which falls within the L-band frequency range. This frequency range is achieved by varying the control voltage from 0.0 to 0.8 V, which shows that the proposed ring VCO is also suitable for low voltage regions. The total power consumed by the proposed ring VCO is 14.70 mW, a remarkably low value using this large transistor count. The achievable value of phase noise is −88.76 dBc/Hz @ 1 MHz offset frequency, which is a relatively small value. The performance of the proposed ring VCO is also evaluated by the figure of merit, achieving −163.13 dBc/Hz, which assures the specificity of the proposed design. The process and temperature variation simulations also validate the proposed design. The proposed oscillator occupied an extremely small area of only 0.00019 mm2 compared to contemporary designs. Originality/value: The proposed CMOS-based supply compensation method is a unique design with the size and other parameters of the components used. All the data and results obtained show its originality in comparison with other designs. The obtained results are preserved to the fullest extent. [ABSTRACT FROM AUTHOR]

Carbon nanotubes (CNTs) are a type of nanomaterial that have excellent electrical properties such as high carrier mobility, high saturation velocity, and small inherent capacitance, showing great promise in radio frequency (RF) applications. Decades of development have been made mainly on cut-off frequency and amplification; however, frequency conversion for RF transceivers, such as CNT-based mixers, has been rarely reported. In this work, based on randomly oriented carbon nanotube films, we focused on exploring the frequency conversion capability of CNT-based RF mixers. CNT-based RF transistors were designed and fabricated with a gate length of 50 nm and gate width of 100 μm to obtain nearly 30 mA of total current and 34 mS of transconductance. The Champion RF transistor has demonstrated cut-off frequencies of 78 GHz and 60 GHz for fT and fmax, respectively. CNT-based mixers achieve high conversion gain from −11.4 dB to −17.5 dB at 10 to 15 GHz in the X and Ku bands. Additionally, linearity is achieved with an input third intercept (IIP3) of 18 dBm. It is worth noting that the results from this work have no matching technology or tuning instrument assistance, which lay the foundations for the application of Ku band transceivers integrated with CNT amplifiers. [ABSTRACT FROM AUTHOR]

The charge linearity of a photomultiplier reflects the difference between the number of photoelectrons in the anode output signal and the number of photoelectrons in the cathode. In this study, the nonlinearity of the photomultiplier tube output range from tens of photoelectrons to hundreds of photoelectrons was measured using a continuous Optical attenuator, and compared with the test scheme of alternating light emission of dual LED light sources. The results showed that the maxi-mum nonlinearity measured by the optical attenuation method increased from 102.62 to 104.55%, and the correctness of the optical attenuation method was verified through numerical methods. [ABSTRACT FROM AUTHOR]

This study explores the pulse formation process in nuclear spectroscopy amplifier systems, with a focus on amplifier linearity analysis and bandwidth measurement. Nuclear spectroscopy is a crucial technique in nuclear physics studies, and the nuclear radiation detectors used must meet specific requirements, including the ability to differentiate the detected radiation energy levels. Pulse formation is a critical stage in this system, as these pulses carry important information about the interaction between radiation and its environment. Linearity testing of the amplifier and bandwidth measurement were conducted experimentally by adjusting input amplitude and frequency settings, as well as observing the amplifier's response to input signal variations. Measurement results indicate that adjustable pulse height and the amplifier system can produce Gaussian-shaped output pulses with appropriate rise times. However, potential issues arise due to limited pulse width and height, which can cause distortion and overload, thus disrupting the analysis of the generated pulses. [ABSTRACT FROM AUTHOR]

Sodium benzoate is a widely used food preservatives and its determination receives much interest. This article describes the development and validation of a method using a UV-VIS-NIR Spectrophotometer at 225 nm to determine the mass fraction of sodium benzoate in water for the purpose of characterization of a reference material. The study was carried out in accordance with the ICH and EURACHEM guides using a primary reference material of sodium benzoate of purity 99.98±0.22%. The studied performance characteristics were the limit of detection (LOD), limit of quantification (LOQ), selectivity, linearity, accuracy, precision, recovery and bias. The results obtained were statistically analyzed and the method showed very good linearity in the selected calibration range. The LOD and the LOQ were found 0.19 and 0.57 mg/kg respectively. This method demonstrated very good accuracy ranging from 99.54 to 100.08% and precision, 0.39% RSD, signifying its high reliability in producing precise and accurate results. The validation results also revealed that the method is fit-for-the purpose of determination of sodium benzoate in water. [ABSTRACT FROM AUTHOR]

Linearity is an important factor that affects actuator accuracy. However, the high nonlinearity of KNN piezoelectric ceramics restricts their application in actuators. In this study, we used grinding stress to improve the linearity of ceramic chips, and used them to fabricate a laminated actuator. The ceramic sheets were ground to a thickness of 0.5 mm. During grinding, some areas of the ceramic changed from tetragonal to orthorhombic, owing to the grinding stress. The piezoelectric constant (d33) increased from 198 to 268 pC/N. Notably, the linearity of the ceramics improved. Seven pieces of ground ceramics were bound, to fabricate a laminated multilayer actuator with a total thickness of 3.5 mm. A DC voltage was applied to the actuator, and the displacement was measured. The displacement reached 0.73 μm under a low driving voltage of 200 V. A linear regression analysis of the displacement–voltage relationship was performed, obtaining the regression equation of the actuator. The linearity correlation coefficient was approximately 0.9903, implying that the actuator exhibits a high accuracy. The grinding stress improved the linearity, together with the piezoelectric properties of the ceramic chips, thus improving the actuator accuracy. This research will promote the application of KNN piezoelectric ceramics in actuators. [ABSTRACT FROM AUTHOR]

This paper presents a broadband, high linearity 7‐bit digital step attenuator (DSA) using a low‐cost bonding wire package. Capacitive compensation technique is proposed to offset the deterioration of attenuation accuracy and operating bandwidth caused by the parasitic parameters of the bonding wire and switching transistors. And the negative voltage bias technique (NVBT) is proposed to improve the linearity of the DSA. Based on the capacitive compensation technique and the NVBT, a 7‐bit DSA is implemented using a 0.13 µm Silicon‐On‐Insulator (SOI) process with a low‐cost bonding wire package. The DSA achieves broadband operation with an insertion loss (IL) of 2.7 dB at 7 GHz and root mean square (RMS) amplitude error less than 0.5 dB at DC‐7 GHz. The input P1 dB of all states is better than 31.7 dBm. [ABSTRACT FROM AUTHOR]

This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications. [ABSTRACT FROM AUTHOR]

This article analyses the impact of parasitic effects encountered in the manufacturing of a Gallium Nitride power amplifier optimized for a specific trade‐off of efficiency and linearity at 5G FR1 frequencies. The analysis focuses on an example based on a packaged transistor and implemented in hybrid technology, adopting a two‐layer printed circuit board for passive distributed elements and surface‐mount lumped components. The design is summarized, and the focus is then posed on the comparison of simulated and measured results, the main causes of inaccuracy in their agreement, and a simple way of reproducing these in simulation. The mechanical stability of the assembly and the sensitivity of the second harmonic control are identified as the main sources of performance degradation. These effects are correctly modeled at the simulation level thanks to the insertion of specific parasitic lumped elements but could not be fully eliminated at the experimental level in this specific prototype. However, post‐tuning performed on the prototype, guided by the proposed analysis, still allows to reach satisfactory performance although somewhat sub‐optimal compared to the one expected from simulations. At 3.5 GHz, the re‐tuned PA demonstrates a measured output power in excess of 37.5 dBm at saturation, with associated gain higher than 14 dB and PAE of 60%. In a 2‐tone test with 20 MHz spacing, the IMD3 remains lower than −30 dBc up to 29 dBm of output power with a corresponding PAE of the order of 32%. [ABSTRACT FROM AUTHOR]

This paper examines a charge plasma‐based hetero‐structure full gate vertical tunnel field effect transistor (CP‐FG‐VTFET) as a dielectrically modulated biosensor. It is also compared with a charge plasma‐based short gate vertical TFET (CP‐SG‐VTFET) biosensor and a charge plasma‐based asymmetrical vertical TFET (CP‐AS‐VTFET) biosensor with identical dimensions. We examine the basic physics of these biosensors and compare their ability to recognize charged and neutral molecules. It has been noted that these designs, which use GaSb as the n‐type TFET source material, are suitable for supply voltages lower than 1.2 V. The short gate device has a lower miller capacitance and a higher drive current because it has a narrow bandgap source material. Additionally, the left and right gate alignment of asymmetrical gate architectures has a considerable impact on the sensitivity of the device. Therefore, a simulation is conducted to assess the effects of gate misalignment on biosensor surface potential and drain current sensitivity. In addition, various figures of merits (FOMs) are computed for the device utilizing the dielectric constant range of 1–12, including linearity, sensitivity, and evaluation of noise characteristics. The widely available Silvaco TCAD was employed to simulate the proposed VTFET biosensors. A comprehensive evaluation of the FOM values showed that the CP‐FG‐VTFET is a promising device in terms of linearity and sensitivity. [ABSTRACT FROM AUTHOR]

Purpose: The goal of this study is to investigate the dosimetric properties of a Semiflex three-dimensional (3D) chamber in an unflatten beam and compare its data from a small to a large field flattening filter-free (FFF) beam with different radiation detectors. Methods: The sensitivity, linearity, reproducibility, dose rate dependency, and energy dependence of a Semiflex 3D detector in flattening filter and filter-free beam were fully investigated. The minimum radiation observed field widths for all detectors were calculated using lateral electronic charged particle equilibrium to investigate dosimetric characteristics such as percentage depth doses (PDDs), profiles, and output factors (OPFs) for Semiflex 3D detector under 6FFF Beam. The Semiflex 3D measured data were compared to that of other detectors employed in this study. Results: The ion chamber has a dosage linearity deviation of +1.2% for <10 MU, a dose-rate dependency deviation of +0.5%, and significantly poorer sensitivity due to its small volume. There is a difference in field sizes between manufacturer specs and derived field sizes. The measured PDD, profiles, and OPFs of the Semiflex 3D chamber were within 1% of each other for all square field sizes set under linac for the 6FFF beam. Conclusion: It was discovered to be an appropriate detector for relative dose measurements for 6 FFF beams with higher dose rates for field sizes more than or equal to 3 cm × 3 cm. [ABSTRACT FROM AUTHOR]

This study analyses a turbine flow meter in the context of a hydrogen compressor system. Basic concepts of turbine flow meter, accuracy and linearity, as well as calibration are described. Physical experimental testing scheme is presented in the paper. The viscosity of the fluid is one of the major factors that affects the performance of turbine flow meters. Numerical modelling experiments for different fluids with different viscosities are performed. Performed numerical modelling experiments give a possibility to continue research into the hydrogen compression system. [ABSTRACT FROM AUTHOR]

Objectives: A simple, sensitive, selective, and cost-effective colorimetric method has been established for the quantitative estimation of atomoxetine hydrochloride in bulk and formulation. Materials and Methods: It was established based on the visible reaction between atomoxetine hydrochloride and 1,2-naphthoquinone-4-sulfonic acid sodium salt in a basic medium (potassium hydroxide). The resulting orange colored chromogen exhibited an absorption maximum at 474 nm. Results: Based on the optimization studies, distilled water as the solvent, 1% w/v potassium hydroxide (2 mL), and 0.3% w/v 1,2-naphthoquinone-4-sulfonic acid sodium salt (2 mL) were used in the method. The developed method was validated per the International Council for Harmonization (ICH) guidelines. The linearity was found at a concentration of 10-50 µg/mL. The method showed a good correlation between the concentration of atomoxetine hydrochloride and its absorbance. The correlation coefficient (r2) of 0.999 evidenced the same. The limits of detection and quantification were 0.20 and 0.606 µg/mL, respectively, for atomoxetine hydrochloride. The accuracy and precision of the method were also evaluated and the results obtained were within the acceptance criteria (relative standard deviation % < 2.00). The percentage assay of atomoxetine hydrochloride proved to be 101.52, which is in accordance with its label claim. Conclusion: The developed method is non-complex and can be effectively employed in the analytical practices of atomoxetine hydrochloride in pharmaceutical dosage forms. [ABSTRACT FROM AUTHOR]

This paper presents 2D-Sentaurus TCAD tool results of a Non-aligned Double Gate Junction N-Channel Field Effect Transistor (NADGNFET) device; the response analysis of device to gate oxide dielectric materials, i.e. silicon dioxide (SiO2) and hafnium dioxide (HfO2), is also presented. The NADGNFET in 90 nm device length is the proposal of this work to improve the second-order effects as well transistor non-linear performance at radio frequency (RF). A non-aligned device in this work consists of two gates extending to the source and drain region with 44.44% channel overlap in total device length. As compared to a full overlap device, the present device has shown better results in Analog Figure of Merit (FOM) and RF parameters like: ION current, ION/IOFF ratio, DIBL (Drain Induced Barrier lowering), SS (Subthreshold Swing), Intrinsic gain (AVO), Transconductance Generation Factor (TGF), Transconductance Frequency Product (TFP), Cut-off frequency (fT), Intercepted Input Power-3 (IIP3) and Intermodulation Distortion power-3 (IMD3). The use of dielectric material with high dielectric constant (HfO2, k = 24) in gate oxide reduces DIBL by 50%, increases the ION/IOFF ratio by 59.1%, increases the Intrinsic gain by 50% compared to low-k dielectric constant (SiO2, k = 3.9). However, results also shows that high-frequency parameters' results were better with low-k dielectric constant. This gives a trade-off in device application. [ABSTRACT FROM AUTHOR]

Unpayable Debt seeks to intervene in the collaborative task of assembling of a whole other analytical apparatus and political program. As a composition, it works in that moment. It does some of the groundwork necessary for designing the kind of shift in thinking needed for addressing what this global moment demands from us. In this response to the comments from readers who share in the same project, I highlight how, because the centrality of thinking in the modern context, its contribution to work on the double task, which also includes a treatment of the tools available for analyzing the political context – a task that demands an excavation and a mapping of their conditions of emergence, production, and deployment. [ABSTRACT FROM AUTHOR]

Spoofing interference is one of the most emerging threats to the Global Navigation Satellite System (GNSS); therefore, the research on anti-spoofing technology is of great significance to improving the security of GNSS. For single spoofing source interference, all the spoofing signals are broadcast from the same antenna. When the receiver is in motion, the pseudo-range of spoofing signals changes nonlinearly, while the difference between any two pseudo-ranges changes linearly. Authentic signals do not have this characteristic. On this basis, an anti-spoofing method is proposed by jointly monitoring the linearity of the pseudo-range difference (PRD) sequence and pseudo-range sum (PRS) sequence, which transforms the spoofing detection problem into the sequence linearity detection problem. In this paper, the model of PRD and PRS is derived, the hypothesis based on the linearity of PRD sequence and PRS sequence is given, and the detection performance of the method is evaluated. This method uses the sum of squares of errors (SSE) of linear fitting of the PRD sequence and PRS sequence to construct detection statistics, and has low computational complexity. Simulation results show that this method can effectively detect spoofing interference and distinguish spoofing signals from authentic signals. [ABSTRACT FROM AUTHOR]

In this paper, the performance of dual-material stacked gate oxide-source dielectric pocket-tunnel field-effect transistor (DMSGO-SDP-TFET) has been investigated by considering fixed interface trap charges (ITCs) at the Si–SiO2 interface. During the analysis, both types of trap charges, positive (donor) and negative (acceptor), have been considered to investigate their effect on the DC, analog/ radio frequency, linearity and harmonic distortion performance parameters in terms of the carrier concentration, electric field, band-to-band tunneling rate, transfer characteristics, transconductance ( g m ), unity gain frequency ( f T ), gain–bandwidth product, device efficiency ( g m / I DS ), transconductance frequency product, transit time (τ), second- and third-order transconductance and voltage intercept points ( g m 2 , g m 3 , VIP2 and VIP3), third-order Input Intercept Point and Intermodulation Distortion (IIP3, IMD3), second-, third-order and total harmonic distortions (HD2, HD3 and THD), respectively. Further, the impact of temperature variations from 2 0 0 K to 5 0 0 K in the presence of ITCs is investigated and the results are compared with conventional DMSGO-TFET. In terms of percentage variation, DMSGO-SDP-TFET depicts lower variation than conventional DMSGO-TFET, indicating that the proposed device is more immune to trap charges and can be used for energy-efficient, high-frequency and linearity applications at elevated temperatures. [ABSTRACT FROM AUTHOR]

GaN has become a prevailing semiconductor in case of power and RF applications. The higher ranking material parameters of GaN, like wider band‐gap, the higher breakdown electric field as well as higher electron velocity when compared to materials like Si, SiC, GaAs etc; allow GaN FINFET to reveal potential advantages such as high voltage and high frequency applications. In this work, a comprehensive study on RF and linearity analysis on Heterojunction‐free GaN layer FINFET through visual technology computer‐aided design (TCAD) device simulator is been illustrated. The influence of varying the Finwidth's of the device on numerous RF parameters like drain current, transconductance (gm), output conductance (gd), gate capacitances(Cgd and Cgs), cut‐off frequency (fT) are studied. And also, the impact of varying the Finwidth's of the device on the numerous linearity parameters like gm2, gm3, VIP3, IIP3, 1 dB compression point were also studied. It is been observed that the higher Finwidth value is more worthy for radio frequency integrated circuit (RFIC) applications. [ABSTRACT FROM AUTHOR]

Wireless technology is a growing technology in which lot of attention move towards 2.4 GHz frequency applications. In transceiver front end, power amplifier is an important block of a transmitter. A low voltage power amplifier is proposed using 0.13 µm TSMC CMOS process. In this proposed work, single-ended two stage class AB power amplifier is designed and RF distortion technique is applied to improve linearity. The high linearity low voltage power amplifier is designed and simulated using ADS simulator. The optimised power amplifier produces 18 dB gain, 21.6% PAE, 21.7 dBm of OIP3 and 5.86 mA current consumption at 0.8 V supply voltage. [ABSTRACT FROM AUTHOR]

This paper introduces a design methodology that reduces the fundamental trade-off between linearity and power added efficiency (PAE) in CMOS power amplifier (PA). In our work, a stacked power block (SPB) has been proposed to mitigate the effect of gate–source capacitance (Cgs), thus linearizing the PA. Each stage is biased independently to shape the gain profile, either to be in the expanded mode or in the compressed mode, in which once combined it delivers a flat gain response and confirming the linearity performance. Efficient PI input and output matching networks are proposed to ensure no further distortion, once connected to the 50 Ω source and load. The PA achieves input and output return losses of less than −10 dB from 2.40 to 2.50 GHz. At the center frequency of 2.45 GHz, the SPB-PA achieves a gain of 10 dB and it is unconditionally stable. The proposed gain shaping linearization technique delivers a maximum linear output power (Poutlinmax) of 19.8 dBm with only 3.3 dB back-off from maximum output power (Poutmax) of 23.1 dBm. The SPB-PA meets the WLAN specification with linear PAE of 30% and peak PAE of 36.1%. The proposed SPB-PA reduces the fundamental trade-off between linearity and efficiency. Integration of this PA in wireless SoC shall reduce the chip's overall power consumption. [ABSTRACT FROM AUTHOR]

The optimisation criterion for dividends from a risky business is most often formalised in terms of the expected present value of future dividends. That criterion disregards a potential, explicit demand for the stability of dividends. In particular, within actuarial risk theory, the maximisation of future dividends has been studied as the so-called de Finetti problem. However, there the optimal strategies typically become so-called barrier strategies. These are far from stable, and suboptimal affine dividend strategies have recently received attention. In contrast, in the class of linear-quadratic problems, the demand for stability is explicitly stressed. These have often been studied in diffusion models different from the actuarial risk models. We bridge the gap between these thinking patterns by deriving optimal affine dividend strategies under a linear-quadratic criterion for an additive process. We characterise the value function by the Hamilton-Jacobi-Bellman equation, solve it, and compare the objective and the optimal controls to the classical objective of maximising the expected present value of future dividends. Thereby we provide a framework within which stability of dividends from a risky business, e.g. in classical risk theory, is explicitly demanded and obtained. [ABSTRACT FROM AUTHOR]

Objectives: A new, simple, and affordable spectrofluorimetric method was established for quantification of capecitabine in bulk and in marketed formulations. Materials and Methods: Native fluorescence of capecitabine in 0.1% (w/v) cetrimide was measured at 386 nm after excitation at 313 nm. Results: A linear relationship between fluorescence intensity and capecitabine concentration was noticed in 0.2-1.0 µg/mL range. The method was supported by checking several validation parameters as stated using International Conference on Harmonization (ICH) guidelines. The limit of detection (LOD) and quantification (LOQ) values (0.032 and 0.096 µg/mL, respectively) and results of validation parameters demonstrated that the method procedure were sensitive, accurate, precise, and reproducible (% relative standard deviation <2.0). The percentage assay in commercial formulation was found to be 99.2, which agrees with ICH guidelines. Conclusion: Due to the above findings, developed method can be successfully adopted for routine analysis of capecitabine in pharmaceutical dosage forms. [ABSTRACT FROM AUTHOR]

FinFET provide themselves as a strong candidate for low-power applications. However, the enactment of a device depends upon the precision of fabrication process. The ion implantation technique of source/drain region extends towards the channel region and affects the device performance. In this paper, the DC and short channel performances like transfer characteristic, output characteristic, Subthreshold Swing (SS), threshold voltage (VT), and current ratio (Ion/Ioff) of SOI FinFET are reported for the variation in lateral straggle parameter (σ) from 0 to 5 nm. The effect of lateral straggle on various RF/analog figure of merits (FOMs) like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), gate capacitance (Cgg), cut off frequency (fc), and gain frequency product (GFP) are presented for SOI FinFET. Furthermore, the linearity performance such as higher-order harmonics (gm2, gm3), voltage intercept point (VIP2, VIP3), input intercept point (IIP3), intermodulation distortion (IMD3), and 1-dB compression point are investigated by varying the lateral straggle from 0 to 5 nm. Results reveal that ION = 0.526 mA, gm = 0.507 mS, and fc = 3 THz are obtained at σ = 5 nm, whereas, VIP2 = 27.5 V and VIP3 = 20.2 V are observed at σ = 0 nm. [ABSTRACT FROM AUTHOR]

This paper presents a step-by-step design approach of a 3rd order continuous-time sigma-delta modulator with a 4-tap FIR feedback DAC achieving 107 dB DR (A-weighted), −110 dB THD and an SNDR of 101.8 dB. The THD is achieved through a fully differential feed-forward compensated op-amp that maintains high linearity with the aid of a class AB output stage and an optimum bias current through a CMFB loop. The modulator consumes 322.5uW of power while taking an area of 0.2925 mm2. • A step-by-step approach of figuring out the right coefficients of FIR feedback compensation of a CT modulator. • A high-linearity feedforward compensated amplifier with class AB bias achieving modulator THD at −110dB. • Detailed analytical models of the sub-components for optimizing the power-performance of the design. [ABSTRACT FROM AUTHOR]

Aucklandia costus Falc. (Synonym: Saussurea costus (Falc.) Lipsch.) is a perennial herb of the family Asteraceae. The dried rhizome is an essential herb in the traditional systems of medicine in India, China and Tibet. The important pharmacological activities reported for Aucklandia costus are anticancer, hepatoprotective, antiulcer, antimicrobial, antiparasitic, antioxidant, anti-inflammatory and anti-fatigue activities. The objective of this study was the isolation and quantification of four marker compounds in the crude extract and different fractions of A. costus and the evaluation of the anticancer activity of the crude extract and its different fractions. The four marker compounds isolated from A. costus include dehydrocostus lactone, costunolide, syringin and 5-hydroxymethyl-2-furaldehyde. These four compounds were used as standard compounds for quantification. The chromatographic data showed good resolution and excellent linearity (r2 ˃ 0.993). The validation parameters, such as inter- and intraday precision (RSD < 1.96%) and analyte recovery (97.52–110.20%; RSD < 2.00%),revealed the high sensitivity and reliability of the developed HPLC method. The compounds dehydrocostus lactone and costunolide were concentrated in the hexane fraction (222.08 and 65.07 µg/mg, respectively) and chloroform fraction (99.02 and 30.21 µg/mg, respectively), while the n-butanol fraction is a rich source of syringin (37.91 µg/mg) and 5-hydroxymethyl-2-furaldehyde (7.94 µg/mg). Further, the SRB assay was performed for the evaluation of anticancer activity using lung, colon, breast and prostate cancer cell lines. The hexane and chloroform fractions show excellent IC50 values of 3.37 ± 0.14 and 7.527 ± 0.18 µg/mL, respectively, against the prostate cancer cell line (PC-3). [ABSTRACT FROM AUTHOR]

This paper presents the effect of dielectric materials i.e., hafnium dioxide (HfO2, high- k) and silicon dioxide (SiO2, low- k) , as gate-oxide material for the nonaligned double gate junction n -channel field effect transistor (NADG-NFET). The NADGNFET device proposed in this work lowers the second order effects and improves the transistor linear performance at radio frequency. The device response with gate-oxide material is investigated by using two dielectric materials on the obtained current–voltage characteristics, intrinsic gain, and linearity parameter. The device simulations were done using a 2D-sentaurus TCAD tool. The results were examined in terms of DIBL (drain-induced barrier lowering), SS (subthreshold swing), I ON current, I ON / I OFF ratio, the Intrinsic gain ( A VO ) , and intermodulation distortion power-3 (IMD3) parameter. It has been found that high- k dielectric decreases the DIBL by 40%, improves the I ON / I OFF ratio by 8 times, and also improves the intrinsic gain by 38% compared to low- k dielectric material. However, the high frequency parameter result was better with low- k dielectric material. This gives a trade-off in the device applications. The IMD3 plot shows that using the two gate-oxide material will give the same performance to the radio frequency (RF) signal. A Junction Symmetrical Non-Aligned Double Gate n-channel MOSFET (NADGNFET) device is proposed in this work. The NADGNFET architecture has polysilicon and gate oxide adjusted within the rectangular structure of length 110 nm and thickness 15 nm. The simulation result shows that when the gate oxide of the device is changed from low-k (SiO2 dielectric constant 3.9) to high-k (HfO2 dielectric constant 24) material, the device performance increases by a large margin. The input characteristic measurement shows DIBL decreased by 40%, and ION/IOFF ratio improved by 8 times, also the intrinsic gain increased by 38% when gate oxide material is changed from SiO2 to HfO2. This work concludes that using high-k material will be cost effective, and performance enhancer for the NADGNFET device making it suitable in wide circuit applications. However, the high frequency parameter result was better with low-k dielectric material. This gives a trade-off in the device applications. [ABSTRACT FROM AUTHOR]

This paper reports the influence of an ultrathin 1.5 nm atomic-layer-deposited HfO2 blanket layer as a gate dielectric on GaN high-electron-mobility transistors (HEMTs) grown on a 4H-SiC substrate. Transistors with a gate length of 250 nm and a source-to-drain distance of 3 µ m were manufactured. The proposed technique involves HfO2 deposition at 250 ∘C prior to the gate metallization with no additional lithography steps. This approach reduced the drain lag by 83% compared to the conventional design with no gate dielectric. The HfO2 layer suppressed the parasitic lateral conduction from the gate, reduced surface trapping, and improved gate electrostatics. The manufactured devices exhibited nearly three orders of magnitude decreased surface leakage, better turn-on behavior, and improved cut-off frequency f T linearity by 16%. High quality metal-oxide interface formation was confirmed by the conductance method. Results demonstrate that the blanket HfO2 deposition is a promising approach to improve the current dispersion characteristics and gate electrostatics of GaN HEMTs without incurring major changes to the established fabrication techniques. [ABSTRACT FROM AUTHOR]

This paper presents a highly linear and high gain down conversion mixer for ultra-wide band receivers for Internet of Things (IoT) applications. The proposed mixer is based on UMC 180 nm technology and is intended for use in the sub-6 GHz radio frequency spectrum. To reduce the effective threshold voltage for low voltage operation, the forward body bias approach has been used with reverse biased diodes. It also reduces the leakage current and improves the noise figure. The modified derivative superposition technique has been employed in transconductance stage to improve the linearity (IIP3) by suppressing third order nonlinear components of the signal. The gm-boosting approach has also been used with the MDS technique to improve Conversion Gain (CG). CG of 17.95 dB, IIP3 of 38.2 dBm, and Noise Figure (NF) of 6.23 dB are achieved with the proposed design. This circuit operates at 0.9 V and consumes 1.89 mW of power. [ABSTRACT FROM AUTHOR]