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Intermediate band solar cells are a new generation of photovoltaics that allow for better utilization of the solar spectrum. The key and most challenging requirement for these cells is an efficient optical coupling between the intermediate band and the charge conducting bands. GaNAs based intermediate band solar cells have been used to generate electroluminescence. Two electroluminescence peaks are generated in the structure with electrically blocked intermediate band. The peaks are observed for both forward and reverse bias configuration and are attributed to optical transitions from the conduction to the intermediate band, and from the intermediate band to the valence band. The origin of the electroluminescence is confirmed by the temperature dependence of the electroluminescence peak energies that is consistent with the band anticrossing model of the intermediate band formation in dilute nitride alloys. This is the first direct observation of the optical transitions required for the operation of intermediate band solar cells. The results also demonstrate that properly modified intermediate band solar cell structures could be used as multicolor light emitters. [ABSTRACT FROM AUTHOR]

The successful synthesis of high crystalline quality and high aspect ratio GaAs nanowires (NWs) with a uniform diameter is needed to develop advanced applications beyond the limits established by thin film and bulk material properties. Vertically aligned GaAs NWs have been extensively grown by Ga-assisted vapor-liquid-solid (VLS) mechanism on Si(111) substrates, and they have been used as building blocks in photovoltaics, optoelectronics, electronics, and so forth. However, the nucleation of parasitic species such as traces and nanocrystals on the Si substrate surface during the NW growth could affect significantly the controlled nucleation of those NWs, and therefore the resulting performance of NW-based devices. Preventing the nucleation of parasitic species on the Si substrate is a matter of interest, because they could act as traps for gaseous precursors and/or chemical elements during VLS growth, drastically reducing the maximum length of grown NWs, affecting their morphology and structure, and reducing the NW density along the Si substrate surface. This work presents a novel and easy to develop growth method (i.e., without using advanced nanolithography techniques) to prevent the nucleation of parasitic species, while preserving the quality of GaAs NWs even for long duration growths. GaAs NWs are grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates using triethylgallium and tertiarybutylarsine precursors by a two-step-based growth method presented here; this method includes a growth interruption for an oxidation on air between both steps of growth, reducing the nucleation of parasitic crystals on the thicker SiOx capping layer during the second and longer growth step. VLS conditions are preserved overtime, resulting in a stable NW growth rate of around 6 µm/h for growth times up to 1 h. Resulting GaAs NWs have a high aspect ratio of 85 and average radius of 35 nm. We also report on the existence of characteristic reflection high-energy electron diffraction patterns associated with the epitaxial growth of GaAs NWs on Si(111) substrates, which have been analyzed and compared to the morphological characterization of GaAs NWs grown for different times under different conditions. [ABSTRACT FROM AUTHOR]