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The 6Li+28Si elastic scattering was studied at near-barrier energies with the aim to probe the threshold anomaly. Angular distributions were measured over a wide angular range (θlab=25° to 150°) at 4 energies, namely, 7.5, 9, 11 and 13 MeV. The present data together with previous ones at higher energies, as well as elastic scattering data of 6Li on various targets at near barrier energies, were analyzed by using optical potentials obtained in a double-folding framework. It was found that the strength of the real part of the potential remains almost independent of energy down to, and possible even below, barrier, while the strength of the imaginary part presents an increase at near barrier energies. The results are discussed. [Copyright &y& Elsevier]

Titanium nitride (TiN) thin films were deposited by dc magnetron sputtering on SiO[sub 2]/n-Si substrates in order to study their use as gate electrodes in metal-oxide-semiconductor (MOS) devices. Rutherford backscattering spectroscopy was used to determine the composition of the films and the results were correlated to those obtained by electrical measurements of the constructed MOS devices. Oxygen contamination of the TiN layers was observed, with percentage and spatial variations depending on the various deposition parameters such as the deposition temperature and the substrate bias. The best electrical performance was achieved for devices where the exposed TiN surface had low oxygen contamination. From these samples, the TiN[sub x]-Si barrier height was calculated to be equal to 0.52 eV. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]