1. Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions.
- Author
-
J. Z. Sun, Brown, S. L., W. Chen, Delenia, E. A., Gaidis, M. C., Harms, J., G. Hu, Xin Jiang, Kilaru, R., Kula, W., Lauer, G., L. Q. Liu, Murthy, S., Nowak, J., O'Sullivan, E. J., Parkin, S. S. P., Robertazzi, R. P., Rice, P. M., Sandhu, G., and Topuria, T.
- Subjects
- *
SPIN transfer torque , *SWITCHING theory , *MAGNESIUM oxide , *TUNNEL junctions (Materials science) , *MAGNETIC tunnelling , *MAGNETIC control - Abstract
It is convenient to define the spin-torque switching efficiency in nanostructured magnetic tunnel junctions as the ratio between the free-layers thermal activation barrier height Eb, and the threshold switching current IcO. Recent device exploration has led to occasional observations of spin-torque induced magnetic switching efficiency in magnetic tunnel junctions that exceeds the macrospin limit by a factor of 2-10. In this paper we examine the possible origins for such enhancement, and materials properties that may allow the full realization of such enhancements [ABSTRACT FROM AUTHOR]
- Published
- 2013
- Full Text
- View/download PDF