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A group of monocotyledonous plants within the order Asparagales, forming a distinct clade in phylogenetic analyses, was reported previously to lack the 'typical' Arabidopsis-type telomere (TTTAGGG)n. This stimulated us to determine what has replaced these sequences. Using slot-blot and fluorescent in situ hybridization (FISH) to species within this clade, our results indicate the following. 1. The typical Arabidopsis-type telomeric sequence has been partly or fully replaced by the human-type telomeric sequence (TTAGGG)n. Species in Allium lack the human-type variant. 2. In most cases the human variant occurs along with a lower abundance of two or more variants of the minisatellite sequences (of seven types evaluated), usually these being the consensus telomeric sequence of Arabidopsis, Bombyx (TTAGG)n and Tetrahymena (TTGGGG)n. FISH shows that the variants can occur mixed together at the telomere. 3. Telomerases generate products with a 6 base pair periodicity and when sequenced they reveal predominantly a reiterated human-type motif. These motifs probably form the 'true telomere' but the error rate of motif synthesis is higher compared with 'typical' plant telomerases. The data indicate that the Asparagales clade is unified by a mutation resulting in a switch from synthesis of Arabidopsis-like telomeres to a low-fidelity synthesis of human-like telomeres. [ABSTRACT FROM AUTHOR]

P-doped ZnO was fabricated by means of the ion-implantation method. At the Raman measurement, the blue shift of the E2 high mode and A1(LO) phonon of the inactive mode were observed after the P-ion implantation. It suggested to be caused by the compressive stress. Thus, Hall effect measurement indicates that the acceptor levels exists in P-doped ZnO while still maintaining n-type ZnO. From the X-ray photoelectron spectroscopy, the chemical bond formation of the P2p3/2 spectrum consisted of 2(P2O5) molecules. Therefore, the implanted P ions were substituted to the Zn site in ZnO. From the photoluminescence (PL) spectra, P-related PL peaks were observed in the energy ranges of 3.1 and 3.5 eV, and its origin was analyzed at PZn-2VZn complexes, acting as a shallow acceptor. With increasing temperatures, the neutral-acceptor bound-exciton emission, (A0, X), shows a tendency to quench the intensity and extend the emission linewidth. From the relations of the intensity and the linewidth as a function of temperature, the broadening of linewidth was believed to the result that the vibration mode of E2 high participates in the broadening process of (A0, X) and the change of luminescent intensity was attributed to the partial dissociation of (A0, X). Consequently, these facts indicate that the acceptor levels existed in P-doped ZnO layer by the ion implantation. [ABSTRACT FROM AUTHOR]