Drijkoningen, Sien, Pobedinskas, Paulius, Korneychuk, Svetlana, Momot, Aleksandr, Balasubramaniam, Yasodhaadevi, Van Bael, Marlies K., Turner, Stuart, Jo Verbeeck, Nesládek, Miloš, and Haenen, Ken
The crucial requirement for diamond growth at low temperatures, enabling a wide range of new applications, is a high plasma density at a low gas pressure, which leads to a low thermal load onto sensitive substrate materials. While these conditions are not within reach for resonance cavity plasma systems, linear antenna microwave delivery systems allow the deposition of high quality diamond films at temperatures around 400°C and at pressures below 1 mbar. In this work the codeposition of high quality plates and octahedral diamond grains in nanocrystalline films is reported. In contrast to previous reports claiming the need for high temperatures (T ≥ 850°C), low temperatures (320°C ≤ T ≤ 410°C) were sufficient to deposit diamond plate structures. Cross-sectional high resolution transmission electron microscopy studies show that these plates are faulty cubic diamond terminated by large {111} surface facets with very little sp² bonded carbon in the grain boundaries. Raman and electron energy loss spectroscopy studies confirm a high diamond quality, above 93% sp³ carbon content. Three potential mechanisms, that can account for the initial development of the observed plates rich with stacking faults, and are based on the presence of impurities, are proposed. [ABSTRACT FROM AUTHOR]