1. Room temperature electrical characteristics of gold-hyperdoped silicon.
- Author
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Lim, Shao Qi, Warrender, Jeffrey M., Notthoff, Christian, Ratcliff, Thomas, Williams, Jim S., and Johnson, Brett C.
- Subjects
- *
DEBYE temperatures , *HALL effect , *NEAR infrared radiation , *ION implantation , *SILICON , *SILICON nanowires - Abstract
Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich surface layers were identified and a wet etch process was developed to remove them. Resistivity and Hall effect measurements were performed at various stages of device processing. The underlying gold-hyperdoped silicon was found to be semi-insulating, regardless of whether the surface gold was removed by etching or not. We propose a Fermi level pinning model to describe the band bending of the transformed surface layer and propose a promising device architecture for efficient Au-hyperdoped Si photodetectors. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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