1. Electronic structure of Mott-insulator CaCu3Ti4O12: Photoemission and inverse photoemission study.
- Author
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Im, H.J., Iwataki, M., Yamazaki, S., Usui, T., Adachi, S., Tsunekawa, M., Watanabe, T., Takegahara, K., Kimura, S., Matsunami, M., Sato, H., Namatame, H., and Taniguchi, M.
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ELECTRONIC structure , *MOTT effect (Physics) , *ELECTRIC insulators & insulation , *COPPER-titanium alloys , *PHOTOEMISSION , *FERMI level - Abstract
We have performed the photoemission and inverse photoemission experiments to elucidate the origin of Mott insulating states in A-site ordered perovskite CaCu 3 Ti 4 O 12 (CCTO). Experimental results have revealed that Cu 3 d –O 2 p hybridized bands, which are located around the Fermi level in the prediction of the local-density approximation (LDA) band calculations, are actually separated into the upper Hubbard band at ~1.5 eV and the lower Hubbard band at ~−1.7 eV with a band gap of ~1.5–1.8 eV. We also observed that Cu 3 d peak at ~−3.8 eV and Ti 3 d peak at ~3.8 eV are further away from each other than as indicated in the LDA calculations. In addition, it is found that the multiplet structure around −9 eV includes a considerable number of O 2 p states. These observations indicate that the Cu 3 d and Ti 3 d electrons hybridized with the O 2 p states are strongly correlated, which originates in the Mott-insulating states of CCTO. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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