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1. Electromigration-induced failure and reliability of metallizations in integrated circuits.

Author

Itskovich, I. F. and Sorbello, R. S.

Subjects
*POLYCRYSTALLINE semiconductors, *INTEGRATED circuits, *ELECTRODIFFUSION, *CRYSTAL grain boundaries
Abstract

Deals with the electromigration-induced open-circuit failures of polycrystalline metallizations in integrated circuits under normal operating conditions. Outline of a model of a single grain boundary; Analysis of void growth at the grain boundary; Interpretation of the research findings.

Published
1993
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