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Background: The number of Japanese children with developmental disabilities (DDs) has seen a steady increase in recent years. The parents and families of children with DD experience distress both at the time of DD diagnosis and afterward. Aim: This study aimed to elucidate the issues and needs of the parents of children with DD to facilitate the development of effective support strategies necessary to help the family handle the special needs of their child with DD. Methods: Japanese-speaking parents with children who were aged 3-14 years and currently being treated in a hospital for DDs were invited to participate in one of three focus groups. A trained moderator led each 90-minute audio-recorded group using a semistructured interview guide. All transcripts were coded using thematic content analysis. Results: Six categories of parents' significant issues were identified, with three of the categories classified as critical needs. Conclusions: The issues and needs identified in this study are useful for developing an effective family support program and a related performance framework. Key concerns include providing relevant information support, providing counseling and consultation support for parents and siblings, and providing resources to children with DD that are necessary to help them deal effectively with their disabilities. [ABSTRACT FROM AUTHOR]

We grew In-rich InxGa1-xN films on yttria-stabilized zirconia (YSZ) substrates at low temperatures by pulsed sputtering deposition. It was found that single-crystal InxGa1-xN (0.63 ≤ x ≤ 0.82) films can be prepared without significant compositional fluctuations at growth temperatures below 500 °C. It was also found that the electrical properties of InGaN are strongly dependent on In composition, growth temperature, and film polarity. N-channel operation of the metal–insulator–semiconductor field-effect transistor (MISFET) with an ultrathin InGaN channel on the YSZ substrates was successfully demonstrated. These results indicate that an InGaN-based MISFET is a promising device for next-generation high-speed electronics. [ABSTRACT FROM AUTHOR]

B High Electron Mobility AlN b In article number 2100074 by Hiroshi Fujioka and co-workers, high electron mobility Si-doped AlN on sapphire (0001) is prepared via the combination of pulsed sputtering deposition and high-temperature annealing. The Si-doped AlN with a dislocation density of 2.8 × 10 SP 8 sp cm SP -2 sp yields high electron mobility of 141 cm SP 2 sp V SP -1 sp s SP -1 sp at room temperature, attributed to the reduction in the dislocation density and residual impurities. High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High-Temperature Annealing. [Extracted from the article]

In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5×1016 and 2.0×1020cm-3. For lightly Si-doped GaN ([Si]=2.1×1016cm-3), the room temperature (RT) electron mobility was as high as 1008 cm2V-1 s-1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2V-1 s-1 at an electron concentration of 2×1020cm-3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2V-1 s-1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices. [ABSTRACT FROM AUTHOR]

We investigated basic characteristics of InN films grown on glass substrates and fabricated thin-film transistors with them. It was found that highly c-axis oriented InN films can be obtained by the surface modification of glass substrates with amorphous HfO2 layers. The electron mobility of the c-axis-oriented InN on HfO2/glass reached 330 cm² V-1 s-1. We demonstrated that a field effect transistor based on the ultrathin film of highly c-axis-oriented InN exhibited an on/off current ratio as high as 106; in addition, this InN-on-glass device supported current densities greater than 14mA mm-1. The results indicate that InN-based ultrathin-film transistors are promising electronic devices that enable high-current densities to be achieved on glass substrates. [ABSTRACT FROM AUTHOR]

To investigate the interfacial charge-transfer phenomena between perovskite transition metal oxides LaNiO3 (LNO) and LaMnO3 (LMO), we have performed in situx-ray absorption spectroscopy(XAS) measurements on LNO/LMO multilayers. The Ni-L2,3 and Mn-L2,3 XAS spectra clearly show the occurrence of electron transfer from Mn to Ni ions in the interface region. Detailed analysis of the thickness dependence of these XAS spectra has revealed that the spatial distribution of the transferred charges across the interface is significantly different between the two constituent layers. The observed spatial distribution is presumably described by the charge spreading model that treats the transfer integral between neighboring transition metal ions and the Coulomb interaction, rather than the Thomas-Fermi screening model. [ABSTRACT FROM AUTHOR]

Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices. [ABSTRACT FROM AUTHOR]