1. A sustainable deposition method for diamond-like nanocomposite coatings – Insights into the evolution of atomic structure and properties.
- Author
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Naseer, Abqaat, Evaristo, Manuel, Oliveira, Joao, Kalin, Mitjan, and Cavaleiro, Albano
- Subjects
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PLASMA-enhanced chemical vapor deposition , *HYDROGENATED amorphous silicon , *MAGNETRON sputtering , *AMORPHOUS carbon , *ATOMIC structure - Abstract
Silicon and oxygen-doped hydrogenated amorphous carbon (a -C:H:Si:O), typically termed as diamond-like nanocomposite (DLN), is amongst the most widely adapted coating materials for advanced applications. Traditionally, these coatings are deposited by plasma-enhanced chemical vapor deposition (PECVD) using organosilicon precursors, which not only restrict coating stoichiometry but also have a high environmental footprint. Here, we report the deposition of highly dense and microscopically defect-free a -C:H:Si:O coating using magnetron sputtering as a facile and sustainable deposition method that allows a fine stoichiometry control. Furthermore, we investigate the evolution of the atomic structure and the local-atomic environment when Si, O, and H atoms are successively doped into the amorphous carbon (a -C) matrix. Diffraction and spectroscopic analyses of doped coatings indicate the absence of any long-range order and an atomic-scale composite structure. The results also establish that doping of a -C leads to improved sp 3 bonding, formation of Si–O-based networks, and termination of carbon dangling bonds, resulting in increased structural stability. The densification of the coating, combined with improved sp 3 character, results in hardness and modulus exceeding those of PECVD-deposited coatings. These findings present a viable potential of magnetron sputtering as a straightforward and greener alternative to traditional PECVD-based methods for producing a promising coating material. [Display omitted] • A facile and sustainable PVD method for a -C:H:Si:O coating is reported. • Structural evolution as triggered by Si, O, and H dopants is elucidated. • This method yields defect-free coatings with high density (2.5 g cm−3) and sp 3 bond fraction (∼0.66). • Hardness (24.4 GPa) and reduced modulus (212.9 GPa) for a -C:H:Si:O reporterd herein, surpass that of PECVD deposited coatings. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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