1. The impact of S vacancies on the modulation of the work function and Schottky barrier at the Au/MoS2 interface.
- Author
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Xie, Duxing, Yang, Fengzhen, Qiu, Xu, Hu, Yuhao, Sun, Yi, He, Shuang, and Wang, Xiufeng
- Subjects
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ELECTRON work function , *DIPOLE moments , *ELECTRONIC equipment , *STRAY currents , *SCHOTTKY barrier , *CHARGE transfer - Abstract
The S vacancy at metal/ MoS 2 interface plays a much important role than the semiconductor itself. In this work, the influence of different configurations of S vacancy concentrations on the effective work function and band structure of the Au/ MoS 2 interface has been investigated systematically using first-principles calculations. The study specifically explores the effective work function of the Au/ MoS 2 interface, the deviation of interface effects from the vacuum work function, and the dipole moment caused by interface charge transfer. The results reveal that the electronic work function of Au/ MoS 2 increases with the increase in S vacancy concentration, but the rate of increase tends to slow down with higher S concentrations. The variation in the effective work function of the Au/ MoS 2 interface may be attributed to the presence of S vacancies and the exposure of Mo atoms. S vacancies lead to a reduction in the Schottky barrier, resulting in increased leakage current. The Fermi pinning caused by S vacancy concentration and location is also observed. The results obtained in this study can serve as a theoretical foundation for applications in electronic devices that rely on metal/ MoS 2 contact. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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