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3 results on '"ELECTRON ENERGY LEVELS"'

1. Investigation of Factors Affecting the Radiation Intensity of Quantum Wells.

Author

Rekhviashvili, Sergo and Boyko, Anton

Subjects
*PHOTON emission, *RADIATION, *ION implantation, *CHARGE carriers, *QUANTUM wells
Abstract

We study the possibilities of increasing the light-emission intensity of quantum wells. We describe the influence of the quantum-well width and the effective mass of charge carriers on the radiation intensity. Since the formation of negatively charged layers near the quantum well can increase the photon emission, we propose to form the charged layers with the use of ion implantation. The results of the study can be implemented in the field of quantum-size light-emitting structures and sensors. [ABSTRACT FROM AUTHOR]

Published
2021
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2. Metal impurities in crystallographic voids of beta-rhombohedral boron lattice: Binding energies and electron levels

Author

Chkhartishvili, Levan, Murusidze, Ivane, Darchiashvili, Maguli, Tsagareishvili, Otar, and Gabunia, Domenti

Subjects
*METAL inclusions, *CRYSTALLOGRAPHY, *BORON compounds, *BINDING energy, *CHEMICAL bonds, *ELECTRON donor-acceptor complexes, *VALENCE (Chemistry)
Abstract

Abstract: Applying quasi-classical approach, the binding energies and electron levels of metal impurities (Li, Mg, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Hf, Ta, and Re) introduced into crystallographic voids of types A, D and E in the beta-rhombohedral boron lattice are calculated. Binding energies are estimated as ∼1 eV–60 eV per bond. The most of the obtained metal–boron bond lengths are very close to the mean radii of voids in the undoped crystal. Relatively light impurities (from Li to Cu) are found to form donor electron states directly inside the conduction band, i.e., they cause metallization of the material being introduced at sufficiently high concentrations. Heavy impurities (from Zr to Re) form shallow or deep donor levels inside the band gap or even valence band depending on dopants and voids of accommodation. [Copyright &y& Elsevier]

Published
2012
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3. Calculation of induced electron states in three-dimensional semiconductor artificial molecules

Author

Li, Yiming, Voskoboynikov, O., Lee, C.P., and Sze, S.M.

Subjects
*ELECTRON emission, *QUANTUM dots
Abstract

The energy levels calculation of electrons confined in small three-dimensional (3D) coupled quantum InxGa1−xAs dots embedded in GaAs semiconductor matrix is presented. The quantum dots have disk shapes and are separated (in the disk symmetry axis direction) by a certain distance. Based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, a finite height hard-wall 3D confinement potential, and the Ben Daniel–Duke boundary conditions, the problem is formulated and solved for the disk-shaped coupled quantum dots. To calculate the ground and induced state energy levels, the nonlinear 3D Schro¨dinger equation (SE) is solved with a developed nonlinear iterative method to obtain the final self-consistent solutions. In the iteration loops, the Schro¨dinger equation is discretized with a nonuniform mesh finite difference method, and the matrix eigenvalue problem is solved with the balanced and shifted QR method. Our complete 3D approach demonstrates a principal possibility that the number of bound electronic states in the system can be changed when the interdot (vertical) distance is modified. However, it is impossible to produce an additional possibility to manipulate the system electronic properties within only a two-dimensional (2D) simulation. [Copyright &y& Elsevier]

Published
2002
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