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Ferromagnetic Josepshon junctions (SFS JJs) are the basic cell of an intense research activity that extends to spintronics. The simultaneous presence of low-dissipative behavior and spin-filtering properties in JJs composed of ferro-insulating barriers (SIfS JJs) suggests their possible implementation in dissipationless versions of spintronics devices. Here, we establish a direct correlation between the suppression of the critical current in the experimental I–V curves of SIfS JJs and the spin-polarization factor derived in terms of the tunneling amplitudes for spin up and down carriers. A modelling of the JJs in terms of the Tunnel Junction Microscopic model allows to provide the scaling of the suppression parameter as a function of the barrier thickness. [ABSTRACT FROM AUTHOR]

Aluminum Josephson junctions are the building blocks for the realization of superconducting quantum bits. Attention has been also paid to hybrid ferromagnetic Josephson junctions, which allow switching between different magnetic states, making them interesting for applications such as cryogenic memories, single-photon detectors, and spintronics. In this paper, we report on the fabrication and characterization of high-quality ferromagnetic Josephson junctions based on aluminum technology. We employed an innovative fabrication process inspired by niobium-based technology, allowing us to obtain very high-quality hybrid aluminum Josephson junctions; thus, supporting the use of ferromagnetic Josephson junctions in advanced quantum circuits. The fabrication process is described in detail and the main DC transport properties at low temperatures (current–voltage characteristic, critical current as a function of the temperature, and the external magnetic field) are reported. Here, we illustrate in detail the fabrication process, as well as the main DC transport properties at low temperatures (current–voltage characteristic, critical current as a function of the temperature, and the external magnetic field). [ABSTRACT FROM AUTHOR]