1. Observation of Hole Accumulation in Ge/Si Core/Shell Nanowires Using off-Axis Electron Holography.
- Author
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Luying Li, David J. Smith, Eric Dailey, Prashanth Madras, Jeff Drucker, and Martha R. McCartney
- Subjects
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ELECTRON holography , *GERMANIUM , *NANOWIRES , *SILICON , *ELECTRON microscope techniques , *CHEMICAL vapor deposition , *SCANNING transmission electron microscopy - Abstract
Hole accumulation in Ge/Si core/shell nanowires (NWs) has been observed and quantified using off-axis electron holography and other electron microscopy techniques. The epitaxial â¨110â©-oriented Ge/Si core/shell NWs were grown on Si (111) substrates by chemical vapor deposition through the vaporâliquidâsolid growth mechanism. High-angle annular-dark-field scanning transmission electron microscopy images and off-axis electron holograms were obtained from specific NWs. The excess phase shifts measured by electron holography across the NWs indicated the presence of holes inside the Ge cores. Calculations based on a simplified coaxial cylindrical model gave hole densities of (0.4 ± 0.2) /nm3in the core regions. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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