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In this work we show how the optical properties of ZnSe nanowires are modified by the presence of Ag nanoparticles on the sidewalls of the ZnSe nanowires. In particular, we show that the low-temperature luminescence of the ZnSe nanowires changes its shape, enhancing the phonon replicas of impurity-related recombination and affecting rise and decay times of the transient absorption bleaching at room temperatures, with an increase of the former and a decrease of the latter. In contrast, the deposition of Au nanoparticles on ZnSe nanowires does not change the optical properties of the sample. We suggest that the mechanism underlying these experimental observations is energy transfer via a resonant interaction, based on the fact that the localized surface plasmon resonance (LSPR) of Ag nanoparticles spectrally overlaps with absorption and emission of ZnSe, while the Au LSPR does not. [ABSTRACT FROM AUTHOR]

The adsorption of a single molecule of the d-enantiomer of alaninol (2-amino-1-propanol) on the surface of Cu(100) is investigated through density functional theory calculations. Different possible adsorption sites for d-alaninol are tested, and it is found that the most stable configuration presents both amino and hydroxyl group covalently interacting with “on top” copper atoms. The electronic structure is analyzed in detail and compared with experimental photoelectron spectra. Another adsorption structure in which a dehydrogenation process is assumed to occur on the amino group is analyzed and provides a possible explanation of the valence band electronic structure and of the experimentally observed N 1score-level shift at full coverage, where a self-assembled ordered chiral monolayer is formed on the copper surface. [ABSTRACT FROM AUTHOR]

We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1–3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a complete picture of the carrier dynamics in silicon. In this way we perform an experimental study with a spectral completeness that is lacking in the whole literature on carrier dynamics in silicon. A particular emphasis is given to the dynamics of the transient absorbance at the energies relative to the direct band gap at 3.3 eV. Indeed, the use of pump energies below and above 3.3 eV allowed us to disentangle the dynamics of electrons and holes in their respective bands. The band gap renormalization of the direct band gap is also investigated for different pump energies. A critical discussion is given on the results below 3.3 eV where phonon-assisted processes are required in the optical transitions. [ABSTRACT FROM AUTHOR]