1. Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy.
- Author
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P D Hodgson, M Bentley, E Delli, R Beanland, M C Wagener, J R Botha, and P J Carrington
- Subjects
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GALLIUM arsenide , *OPTICAL properties of metals , *QUANTUM dots , *MOLECULAR beam epitaxy , *CRYSTAL growth , *ATOMIC force microscopy - Abstract
We present the results of an investigation into the growth of InGaSb/GaAs quantum dots (QDs) by molecular beam epitaxy using migration-enhanced epitaxy. Surface atomic force microscopy and cross-sectional transmission electron microscopy show that the QDs undergo a significant change in morphology upon capping with GaAs. A GaAs ‘cold capping’ technique was partly successful in preserving QD morphology during this process, but strong group-V intermixing was still observed. Energy-dispersive x-ray spectroscopy reveals that the resulting nanostructures are small ‘core’ QDs surrounded by a highly intermixed disc. Temperature varying photoluminescence (PL) measurements indicate strong light emission from the QDs, with an emission wavelength of 1230 nm at room temperature. Nextnano 8 × 8 k.p calculations show good agreement with the PL results and indicate a low level of group-V intermixing in the core QD. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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