Search

Silver oxalate Ag 2 C 2 O 4 , was already proposed for soldering applications, due to the formation when it is decomposed by a heat treatment, of highly sinterable silver nanoparticles. When slowly decomposed at low temperature (125 °C), the oxalate leads however to silver nanoparticles isolated from each other. As soon as these nanoparticles are formed, the magnetic susceptibility at room temperature increases from −3.14 10 −7 emu.Oe −1 .g −1 (silver oxalate) up to −1.92 10 −7 emu.Oe −1 .g −1 (metallic silver). At the end of the oxalate decomposition, the conventional diamagnetic behaviour of bulk silver, is observed from room temperature to 80 K. A diamagnetic-paramagnetic transition is however revealed below 80 K leading at 2 K, to silver nanoparticles with a positive magnetic susceptibility. This original behaviour, compared to the one of bulk silver, can be ascribed to the nanometric size of the metallic particles. [ABSTRACT FROM AUTHOR]

Comparisons between several pairs of contact materials are done with a new methodology using a commercial nanoindenter coupled with electrical measurements on test vehicles specially designed to investigate microscale contact physics. Experimental measurements are obtained to characterize the response of a 5-µm [ABSTRACT FROM AUTHOR]

At the present time, the insertion of radio frequency microelectromechanical switches into real architecture requires reduced actuation voltages, reduced dimensions, and better control of the electrical and electromechanical behavior that gives more importance to surface effects, their understanding, and modeling. The use of such devices requires the development of methods for estimating the contact performances as a function of surface roughness, contact materials, and contact topologies. With increase in computation capabilities, the rough surface topography can be implemented in the finite element model but implies long calculation times or even calculation overloading if a high definition of the roughness is desired. To reduce these limitations, assumptions on the microgeometry are required. This paper treats, by use of finite element modeling, the influence of the definition of roughness of contacting switch members on the electrical contact resistance of resistive switches, and investigates the error introduced by using a minimum defined atomic force microscope sampling interval of 10 nm. The present numerical analysis is implemented for switch test structures. [ABSTRACT FROM PUBLISHER]