1. Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films.
- Author
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Charrier, A., Coati, A., Argunova, T., Thibaudau, F., Garreau, Y., Pinchaux, R., Forbeaux, I., Debever, J.-M., Sauvage-Simkin, M., and Themlin, J.-M.
- Subjects
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SILICON carbide , *GRAPHITE , *THIN films , *SOLID state electronics - Abstract
Using grazing-incidence x-ray diffraction and scanning tunneling microscopy (STM), we show that the thermal decomposition of an electronic-grade wafer of 6H-SiC after annealing at increasing temperatures T[sub A] between 1080 and 1320 °C leads to the layer-by-layer growth of unconstrained, heteroepitaxial single-crystalline graphite. The limited width of the in-plane diffraction rod profiles of graphite reveals large terraces, with an average size larger than 200 Å and a very small azimuthal disorientation. The overlayer is unstrained and adopts the crystalline parameter of bulk graphite even at the smallest coverage studied, which corresponds to a single graphene plane, as inferred from the flat out-of-plane diffraction profile. By increasing T[sub A], additional graphene planes can be grown below this graphite layer from the solid-state decomposition of SiC, forming the AB stacking of Bemal graphite. A C-rich precursor is evidenced in STM by an intrinsic (6 × 6) reconstruction made of ordered ring or starlike structures. The resulting epitaxial film is indistinguishable from a bulk graphite single crystal. [ABSTRACT FROM AUTHOR]
- Published
- 2002
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