1. High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences.
- Author
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Yi-Yang Liu, Cheng-Li Song, Wei-Jing Zeng, Kai-Ge Zhou, Zi-Fa Shi, Chong-Bo Ma, Feng Yang, Hao-Li Zhang, and Xiong Gong
- Subjects
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ELECTRON mobility , *THIN films , *FIELD-effect transistors , *NITROGEN , *SEMICONDUCTORS , *MOIETIES (Chemistry) - Abstract
We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyndine (1) and 8,9,10,11 -tetrafluoro-6, 13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhib high and balanced hole and electron mobilities, 1 having μh and μe of 0.11 and 0.15 cm²/V·s and 3 having μh and μe of 0.08 and 0.09 cm²/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors. [ABSTRACT FROM AUTHOR]
- Published
- 2010
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