1. High-resolution elemental profiles of the silicon dioxide/4H-silicon carbide interface.
- Author
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Chang, K. -C., Cao, Y., Porter, L. M., Bentley, J., Dhar, S., Feldman, L. C., and Williams, J. R.
- Abstract
High-resolution elemental profiles were obtained from SiO2(N) /4H-SiC structures by spatially resolved electron energy-loss spectroscopy (EELS) performed in the scanning transmission electron microscopy mode. The results show that following annealing in NO, N was exclusively incorporated within ~1 nm of the SiO2(N) /4H-SiC interface. Mean interfacial nitrogen areal densities measured by EELS were ~(1.0±0.2)×1015 cm-2 in carbon-face samples and (0.35±0.13)×1015 cm-2 in Si-face samples; these results are consistent with nuclear reaction analysis measurements. Some of the interface regions in the C-face samples also showed excess carbon that was not removed by the NO annealing process, in contrast with previous results on Si-face samples. [ABSTRACT FROM AUTHOR]
- Published
- 2005
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