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In this article, a performance comparison has been conducted between Si MOSFETs, SiC MOSFETs, and Gallium nitride (GaN) GITs in single phase BSNPC inverter. The PSpice study shows that the All GaN GITs BSNPC inverter has the highest efficiency of 98.97% compared to all other power devices used in the simulations. Due to a low dead time of 50 ns, the THD in output voltage for the All GaN GITs BSNPC inverter has decreased by 10% compared to the All Si MOSFETs BSNPC inverter and by 0.5% compared to the All SiC MOSFETs BSNPC inverter. The operation of GaN GITs at 200 kHz resulted in a 63% reduction in output filter size compared to the operation at 10 kHz. The Gate Drive circuit for GaN GITs and its complete design is presented. The All GaN GITs BSNPC inverter laboratory prototype study shows that at 16 kHz, 700 W the maximum efficiency of 99.4% is achieved whereas at 64 kHz, 350 W the lowest efficiency of 98.7% is achieved. The performance of the two GaN GITs connected in series to make a single series bidirectional switch is very reliable and robust. When the switching frequency is increased from 16 kHz to 64 kHz at 700 W output power, the reduction in the output filter size is 35%. The reduction in THD in the output voltage is 8.3% for the GaN GITs when operated at 150 ns dead time compared to 1 μs dead time. [ABSTRACT FROM AUTHOR]

Bi-directional power switch architectures are emerging as a key enabler of advanced integration and enhanced functionality options in modern motor-drive concepts targeting the development of more efficient, power dense and reliable solutions in energy-strategic applications ranging from transportation to air-conditioning, sewage and industrial. Specifically, wide-band-gap semiconductor based highly integrated solutions capable of withstanding high operational temperatures are required. Whereas with GaN, lateral devices, monolithic integration efforts are being pursued, the vertical structure of SiC transistors requires the development of bespoke packaging. This paper presents such a solution, based on the use of power overlay technology to yield a 200 °C validated power switch. • Innovative design of integrated bi-directional SiC MOSFET switch, with low stray components and static temperature validation up to 200 °C • Deployment of specialist design methodologies (FEM) for both electro-thermal and electro-magnetic analysis • Innovative solution for insulation/gel filling under void • Preliminary experimental demonstration and electro-thermal electro-magnetic characterisation, with extremely contained values of stray inductance • Innovative double-pulse testing approach • Discussion of further needs for ensuring overload robustness (e.g., short circuit) [ABSTRACT FROM AUTHOR]

This paper proposes the application of different modulation strategies to the inverter used in a motor-drive, depending on the wide operational point, to minimise the electro-thermal stress of the semiconductor devices and other components in the system. As a case study, a multi-level SiC inverter is considered, derived from an actual industrial product. Using the proposed hybrid modulation, results indicate that considerable reduction of inverter energy losses can be achieved during cycle, depending on the switching frequency, and power device characteristics. • innovative hybrid PWM technique for wide range operated three-level ANPC inverter • approach for minimizing electro-thermal stress of power device and total energy consumption • loss prediction of silicon carbide depending on PWM strategy with inverter-machine co-simulation model • finite element analysis of IPMSM depending on inverter PWM technique • preliminary experimental demosntration and loss measurement of powe device • discussion of further needs for ensuring reliability (e.g., parasitic inductance effect) [ABSTRACT FROM AUTHOR]

This paper presents the tradeoff study of heat sink and output filter volume of a GaN HEMT based single-phase inverter. The selected topology is three-level active neutral point clamped (ANPC) inverter, and the main aim is to explore the benefits of the GaN HEMTs at 600 V blocking class on the system level efficiency, and power density under the wide range of operating conditions. The paper starts by introducing the inverter topology, selected pulse width modulation scheme and followed by the device features, static, and dynamic characterization and continues with presenting and discussing the results of extensive experimental and analytical characterization. After this, the impact of GaN HEMTs on inverter volume is discussed in terms of heat sink and output filter volume analysis under different switching frequency and heat sink temperature conditions. The calculation of heat sink volume and single stage LC output filter volume are presented with respect to experimental results of the single phase prototype. The findings from static, dynamic characterization, and single phase prototype results clearly show that GaN HEMT has excellent switching performance under wide load current and heat sink temperature conditions. The high performance of the inverter leads to reduction of the combined total volume, including output filter and heat sink volume. [ABSTRACT FROM AUTHOR]

This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half-bridge two-level SiC power module with six MOSFETs and can be used for coupled electrothermal simulation. The finite-element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical resistor–capacitor (RC) network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the six MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the six MOSFETs under switching frequencies from 5 to 100 kHz which demonstrate the good electrothermal performance of the designed power module. [ABSTRACT FROM PUBLISHER]

This paper proposes an on-board methodology for monitoring the health of power converter modules in drive systems, using vector control heating and structure function to check for degradation. It puts forward a system that is used on-board to measure the cooling curve and derive the structure function during idle times for maintenance purposes. The structure function is a good tool for tracking the magnitude and location of degradation in power modules. The ability to keep regular track of the actual degradation level of the modules enables the adoption of preventive maintenance, reducing or even eliminating altogether the appearance of failures during operation, significantly improving the availability of the power devices. The novelty in this work is the complete system that is used to achieve degradation monitoring, combining the heating technique and the measurement without additional power components except the measurement circuit which can be integrated into the gate drive board and the challenges encountered. Experimental results obtained from this show that it is possible to implement an on-board health monitoring system in converters which measures the degradation on power modules. [ABSTRACT FROM PUBLISHER]

This paper presents an original modular plug-in-type assembly approach for a single-phase inverter. The main focus here is, indicatively, on the power range 1–20 kW, but the methodology can be transferred to higher power levels too. At the core of the inverter lies a power-dense double-sided-cooled half-bridge power switch architecture with integrated cooler, which is interconnected to filter elements, gate driver, and control circuitry by means of compact flat connectors. The integration exercise targets, on the one hand, the optimization of the power switch performance and reliability, as well as the reduction of circuit parasitic elements; on the other, the production of a system compatible with maintenance and repairing, featuring minimized impact of single component failure on the system maintenance and repair cost, and, thus, on its availability. Preliminary experimental tests demonstrate the nominal functionality of the inverter. [ABSTRACT FROM PUBLISHER]

A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit. [ABSTRACT FROM AUTHOR]

In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power switches at 600-V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume, and dead-time effect for each technology is evaluated. Gate driver study shows that GaN has the lowest gate driver losses above 100 kHz and below 100 kHz, SiC has lowest gate losses. GaN has the best switching performance among three technologies that allows high efficiency at high-frequency applications. GaN-based inverter operated at 160-kHz switching frequency with 97.3% efficiency at 2.5-kW output power. Performance of three device technologies at different temperature, switching frequency, and load conditions shows that heat sink volume of the converter can be reduced by 2.5 times by switching from Si to GaN solution at 60 ^\circ C case temperature, and for SiC and GaN, heat sink volume can be reduced by 2.36 and 4.92 times, respectively, by increasing heat sink temperature to 100 ^\circ C. Output filter volume can be reduced by 43% with 24, 26, and 61 W increase in device power loss for GaN-, SiC-, and Si-based converters, respectively. WBG devices allow reduction of harmonic distortion at output current from 3.5% to 1.5% at 100 kHz. [ABSTRACT FROM AUTHOR]

The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results. [ABSTRACT FROM AUTHOR]

This paper presents an advanced dynamic cooling strategy for multi-layer structured power electronic modules. An observer based feedback controller is proposed to reduce a power device or module's thermal cycle amplitude during operation, with the aim of improving reliability and lifetime. The full-state observer design is based on a developed Cauer type thermal model. The observer enables estimation and control of the temperature at reliability critical locations only measuring one accessible location. This makes the method particularly powerful and suitable for application in power systems. The designed strategy is confirmed experimentally. Although the experiment is developed for a specific application scenario, the proposed strategy is of general validity. [ABSTRACT FROM AUTHOR]

The need for multidisciplinary virtual prototyping in power electronics has been well established, however, design tools capable of facilitating a rapid iterative virtual design process do not exist. A key challenge in developing such tools is identifying and developing modeling techniques which can account for 3-D geometrical design choices without unduly affecting simulation speed. This challenge has been addressed in this paper using model order reduction techniques and a prototype power electronic design tool incorporating these techniques is presented. A relevant electrothermal power module design example is then used to demonstrate the performance of the software and model order reduction techniques. Five design iterations can be evaluated, using 3-D inductive and thermal models, under typical operating and start-up conditions on a desktop PC in less than 15 min. The results are validated experimentally for both thermal and electrical domains. [ABSTRACT FROM PUBLISHER]

A stacked substrate-chip-bump-chip-substrate assembly has been demonstrated in the construction of power switch modules with high power density and good electrical performance. In this paper, special effort has been devoted to material selection and geometric shape of the bumps in the design for improving the thermomechanical reliability of a highly integrated bidirectional switch. Results from 3-D finite-element simulation indicate that for all design cases the maximum von Mises stresses and creep strain accumulations occur in the solder joints used to join bumps on IGBTs during a realistic mission profile, but occur in the solder joints used to join bumps on DBC substrates during accelerated thermal cycling. The results from both the simulation and the accelerated thermal cycling experiments reveal that selection of Cu/Mo/Cu composite brick bumps in the stacked assembly can significantly improve the thermomechanical reliability of both the solder joints and the DBC substrates when compared to Cu cylinder bumps and Cu hollow cylinder bumps reported in previous work. Such results can be attributed to the effective reduction in the extent of mismatch of coefficients of thermal expansion between the different components in the assembly. [ABSTRACT FROM AUTHOR]

With the commercial availability of SiC power devices, their acceptance is expected to grow in consideration of the excellent low switching loss, high-temperature operation, and high-voltage rating capabilities of these devices. This paper presents the comparative performance evaluation of different SiC power devices in the matrix converter at various temperatures and switching frequencies. To this end, first, gate or base drive circuits for normally-off SiC JFET, SiC MOSFET, and SiC BJT by taking into account the special demands for these devices are presented. Then, four two-phase to one-phase matrix converters are built with different Si and SiC power devices to measure the switching waveforms and power losses for them at different temperatures and switching frequencies. Based on the measured data, four different SiC and Si power devices are compared in terms of switching times, conduction and switching losses, and efficiency at different temperatures and switching frequencies. Furthermore, a theoretical investigation of the power losses of the three-phase matrix converter with normally-off SiC JFET, SiC MOSFET, SiC BJT, and Si IGBT is described. The power losses estimation indicates that a 7-kW matrix converter would potentially have an efficiency of approximately 94% in high switching frequency if equipped with SiC devices. [ABSTRACT FROM AUTHOR]

Virtual prototyping of power electronic modules aims to allow rapid evaluation of potential designs without the need to resort to building and testing physical prototypes. A key requirement for this process is the ability to quickly generate small, compact models describing the thermal performance of a potential design and this study presents a novel approach for this model generation process. The approach starts with a finite-difference mesh of the proposed design and applies a fast sparse matrix solver (GMRES) to determine the steady-state response to a particular power input. In doing this, approximations for the eigenvalues of the system can also be obtained from the same algorithm. It is shown that these two results can then be used to create small compact models describing the dynamic thermal properties within the design. The method is validated against an analytical solution for 1-D heat conduction and against experimental results for a simple power module. This process can be automated and it is shown that compact models can be generated in around 12 s per power input from the finite-difference mesh of the power module containing 14 623 nodes on a standard desktop PC. [ABSTRACT FROM AUTHOR]

Abstract: Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigation for devices of different voltage classes (600 and 1200V) and different manufacturers, highlighting important differences in electro-thermal performance and failure mode as compared to Si devices. The goal is to derive information for design optimisation and reliable device development for a diverse range of target applications. [Copyright &y& Elsevier]

This paper proposes the model development of a packaged semiconductor power module, for use in a circuit simulation environment. Focusing on railway traction applications, it considers a state-of-the-art 6.5 kV insulated gate bipolar transistor (IGBT) module, taking into account the antiparallel connection of IGBTs and free-wheeling diodes, and including all main electrothermal and electromagnetic effects associated with the multi-chip structure. The description of semiconductor physics is coupled with self-heating effects; electromagnetic phenomena associated with the packaging, layout, and interconnections are also taken into account. To optimize the compromise between accuracy and computational effort, the device models are based on a mixed physical and behavioral description, and are scalable to be representative of a desired number of parallel devices and to allow for the introduction of parasitic elements, as required. Electromagnetic effects are modeled by means of equivalent lumped elements, extracted by numerical simulation of an accurate 3-D structural assembly model. The description of transient thermal phenomena relies on a finite-difference approach that considers the use of both essentially 1-D lumped equivalent models and fully 3-D distributed description. The model is validated statically and dynamically, against both data-sheet information and measurements; a selection of simulation examples demonstrates its usefulness and versatility. Although developed for a specific application scenario, the proposed approach is of general validity. [ABSTRACT FROM AUTHOR]

Abstract: To satisfy the design and optimization needs of increasing power device structural and functional integration, novel simulation approaches need to be considered. In particular, the availability of a unified platform enabling multi-physical-domain analysis and multi-level abstraction is paramount to ensure sufficient flexibility and provide the required insight. Based on VHDL-AMS, this work presents the model development for two integrated power devices, conceived for operation under quite diverse bias conditions and thus exhibiting different criticalities. Simulation results are checked against experimental data to demonstrate the usefulness of the description method considered. The proposed models can be usefully employed in a broad range of investigations, ranging from development activities to reliability investigation. [Copyright &y& Elsevier]

This paper analyzes the operation of PowerMOSFETs in the 42-V-PowerNet and shows that very stressful conditions are encountered, which can lead to severe reliability problems. To enable thorough investigations by circuit simulations an accurate physics-based compact model of the devices is proposed: it includes all important electrothermal effects relevant to the description of the observed failure mechanisms. By means of an advanced thermal-modeling approach, multichip assemblies can be accurately described, including mutual heating effects between neighboring devices. Some properly chosen examples demonstrate the validity of the model and its usefulness for reliability investigations. [ABSTRACT FROM AUTHOR]

Abstract: An experimental infrared method for the thermal characterisation of semiconductor devices during fast transient operation, in the range from a few microseconds and up to some milliseconds, is presented. The features which make it suitable and convenient, particularly for use with power electronics applications are pointed out; its time and space resolution are illustrated by means of properly chosen examples. The considered solution qualifies as a very versatile and powerful tool in many diverse lines of investigation. [Copyright &y& Elsevier]

The ability of monitoring the chip temperatures of power semiconductor modules at all times under various realistic working conditions is the basis for investigating the limits of the maximum permissible load. A novel transient thermal model for the fast calculation of temperature fields and hot spot temperature evolution presented recently is extended to include time-dependent boundary conditions for variations of ambient temperature and surface heat flows. For this a Green's function representation of the temperature field is used. Also, general initial temperature conditions are included. The method is exemplified by application to a dc/ac converter module for automotive hybrid drives. The thermal model, which can be represented by a thermal equivalent circuit, then is combined with an electrical PSpice-metal-oxide semiconductor field-effect transistor (MOSFET) model to allow for the fully self-consistent electrothermal circuit simulation of 42-V/14-V dc/dc-converter modules. 670 converter periods with altogether 8000 MOSFET switching cycles in the six-chip module can be simulated within 1-h computing time on a Pentium PC. Various simulation results are presented, which demonstrate the feasibility of the simulation method and allow for the optimization of converter losses. Short circuit modes of converter operation are investigated with a high temperature increase also revealing the thermal interaction between different chips. [ABSTRACT FROM AUTHOR]

Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of high-temperature electronics, hands-on experience has highlighted a number of gains that can be drawn from this technology even when used as a straightforward drop-in substitute of silicon in established applications and field-proven designs. Incremental in nature, these gains enable interesting progress beyond state-of-the-art forms, which, though not corresponding to the full exploitation of the potential of this technology, are oftentimes sufficient to justify its adoption. With particular reference to renewable energy power conversion and solid-state transformation, in the context of transport applications and incorporating a storage device, this paper reports on the understanding generated over the past few years and points out some specifically tailored technology and circuit design requirements to ensure overall beneficial impact of the adoption of WBG technology. [ABSTRACT FROM AUTHOR]

Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well as hybrid circuit breakers (HCBs) with semiconductor power devices. A few novel SSCB and HCB concepts are described in this paper, including advantage and limitation discussions of wide-band-gap (WBG) devices in basic SSCB/HCB configuration by simulation and 360 V/150 A experimental verifications. Novel SSCB/HCB configurations combining ultra-fast switching and high efficiency at normal operation are proposed. Different types of power devices are installed in these circuit breakers to achieve adequate performance. Challenges and future trends of semiconductor power devices in SSCB/HCB with different voltage/power levels and special performance requirements are clarified. [ABSTRACT FROM AUTHOR]

The future development of high-performance power electronics will rely increasingly on system-level integration, where semiconductor devices are co-packaged with other active and passive components (e.g., gate drivers, filter capacitors, and inductors) into a power module. In view of the widespread electrification of pivotal elements of the energy generation and distribution infrastructure (e.g., smart grids, electric aircraft, electric vehicles), modularity is also increasingly gaining importance as a means of enhancing overall system performance and reducing long-term maintenance costs. This paper focuses on the development of a highly integrated three-to-one phase matrix converter for avionic applications. It proposes an integration approach that enhances the volumetric and gravimetric power handling capability, with enhanced electromagnetic and electrothermal performance as compared to established solutions. Maintenance is also simplified by the modular assembly approach. [ABSTRACT FROM AUTHOR]

An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- \mu\m-thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and reliability of the assembly, with a fully bondwireless approach using cylindrical copper bumps. Advanced numerical structural simulation techniques are also applied to assess the influence of interconnect characteristics (material, size, and shape) and try to determine an optimum solution for reducing the stress and creep strain development in the solder joint. Preliminary experimental tests of the power module are also carried out at different switching frequency and loads to prove the validity of the proposed solution in terms of electromagnetic performance. [ABSTRACT FROM AUTHOR]

With the introduction of the more electric aircraft, there is growing emphasis on improving overall efficiency and thus gravimetric and volumetric power density, as well as smart functionalities and safety of an aircraft. In future on-board power distribution networks, so-called high voltage DC (HVDC, typically +/−270VDC) supplies will be introduced to facilitate distribution and reduce the associated mass and volume, including harness. Future aircraft power distribution systems will also very likely include energy storage devices (probably, batteries) for emergency back up and engine starting. Correspondingly, novel DC-DC conversion solutions are required, which can interface the traditional low voltage (28 V) DC bus with the new 270 V one. Such solutions presently need to cater for a significant degree of flexibility in their power ratings, power transfer capability and number of inputs/outputs. Specifically, multi-port power-scalable bi-directional converters are required. This paper presents the design and testing of such a solution, addressing the use of leading edge wide-band-gap (WBG) solid state technology, especially silicon carbide (SiC), for use as high-frequency switches within the bi-directional converter on the high-voltage side. [ABSTRACT FROM AUTHOR]

High-frequency-link power-conversion is gaining popularity in recent days due to reduction of the size and weight of the converters for various applications. The performance of the dual active bridge heavily depends on the nature of modulation strategy used and on the loading conditions. Look-up table (LUT) based output power and output voltage dependent modulation strategies to investigate the peak current stress and harmonics in high-frequency link current is proposed in this article. The modulator is, thus, simple to implement. The peak stress, the harmonics (total demand distortion) in link current, and associated losses due to the proposed techniques are compared in four main cases, namely, first, single-phase shift, second, dual-phase shift, third, triple phase shift, and, fourth, modified phase shift (MPS)-I, -II, and -III. In MPS-I, weighted aggregate of harmonic currents minimization including fundamental component is carried out to achieve the minimum conduction losses in the magnetic elements. The same method is extended for minimizing the peak-to-peak ripple in the link current as MPS-II. In MPS-III, the desired total demand distortion in the ac-link current is enforced. The variation of voltage transfer ratio between input and output is taken into consideration using two-dimensional (2-D) LUT. Moreover, the requirement of 2-D LUTs are eliminated by using suitable curve-fitting exercise for the output load voltage variation and 1-D LUTs of coefficients. A detailed simulation study, associated mathematical analysis of the methods adopted and experimental verification are presented from 1 kW prototype. [ABSTRACT FROM AUTHOR]

This article presents the detailed thermal analysis and modeling of multichip power modules (PMs). For the first time, a fair thermal comparison between the widespread single-sided cooled (SSC) technology and the innovative double-sided cooled (DSC) one is presented. The latter solution emerges among all packaging techniques due to its improved electrical performances and mechanical reliability. The investigation is carried out using 3-D finite-element method thermal simulations automated by an in-house routine. The PMs under test are thoroughly studied in a wide range of boundary conditions (BCs) in order to support the choice of an appropriate cooling strategy and the comprehension of the heat spreading (HS) effect occurring in such domains. In addition, attention is paid to dynamic behavior. Thermal modeling strategies are then proposed and discussed. As the main finding, no relevant thermal discrepancies were observed in the two PM technologies. In most of the BCs, the SSC PM enjoys an enhanced HS effect leading to a better thermal behavior with respect to the DSC counterpart, the adoption of which is justified only in the presence of excellent cooling systems. [ABSTRACT FROM AUTHOR]

A novel implementation of an isolated gate driver for power switches is proposed in this study. The driver is bespoke designed for SiC power mosfets. The proposal achieves the main driver characteristics—isolation capability, gate switching command, and power transfer to the secondary side by using a unique magnetic transformer. The resulting simple circuitry enables the integration of the driver into the power cell, achieving theoretical higher power density values of the final system. The principle of operation of the driver is described in detail. The original pulsewidth modulation signal is modulated with a pure ac square waveform under a two-level modulation scheme, that guarantees no saturation of the magnetic core. The signal is then magnetically coupled to the secondary side, where it is rectified and reconstructed to effectively drive the target device. In addition, the steps needed to provide a suitable design taking into account the parameters of the target power switch are also detailed. The resulting driver is characterized and a prototype of the driver is built and tested. The main results of the driver performance on a SiC mosfet-based prototype are presented. Based on the analysis of these results, this study experimentally demonstrates the feasibility of the proposal. [ABSTRACT FROM AUTHOR]

In this paper, an ultralow inductance power cell is designed for a three-level active neutral point clamped (3L-ANPC) based on 650-V gallium nitride (GaN) high electron mobility transistor (HEMT) devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultralow inductance power cell design based on a four-layer printed circuit board with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite-element analysis and is discussed. Common-mode behaviors based on the simulation program with integrated circuit emphasis (SPICE) model of the converter are analyzed. Experimental results on the designed 3L-ANPC with output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultralow inductance. [ABSTRACT FROM AUTHOR]

The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high-power applications, where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high-power thyristor-based applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require antiparallel PiN diodes for enabling reverse conduction capability. In these high-power applications, paralleling chips for high current conduction capability is a requirement, hence, electrothermal stability during current sharing is critical. SiC Schottky diodes not only exhibit the advantages of wide bandgap technology compared to silicon PiN diodes, but they have significantly lower zero temperature coefficient (ZTC), meaning they are more electrothermally stable. The lower ZTC is due to the unipolar nature of SiC Schottky diodes as opposed to the bipolar nature of PiN diodes. This paper investigates the implementation and reliability of SiC Schottky diodes in press-pack assemblies. The impact of pressure loss on the electrothermal stability of parallel devices is investigated. [ABSTRACT FROM PUBLISHER]

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown. [ABSTRACT FROM AUTHOR]

Photovoltaic (PV) energy conversion has been on the spotlight of scientific research on renewable energy for several years. In recent years, the bulk of the research on PV has focused on transformerless grid-connected inverters, more efficient than traditional line transformer-based ones, but more critical from a power quality point of view, especially in terms of ground leakage current. Neutral-point-clamped (NPC) inverters have recently gained interest due to their intrinsically low ground leakage current and high efficiency, especially for MOSFET-based topologies. This paper presents an active NPC (ANPC) topology equipped with 650-V silicon carbide (SiC) MOSFETs, with a new modulation strategy that allows to reap the benefits of the wide-bandgap devices. An efficiency improvement is obtained due to the parallel operation of two devices during the freewheeling intervals. Simulations and experimental results confirm the effectiveness of the proposed converter. [ABSTRACT FROM PUBLISHER]

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm's law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology. [ABSTRACT FROM AUTHOR]

In this paper, an experimental and numerical study of the electrical ruggedness in double-sided cooled power modules is presented. In particular, the analysis focuses on the role of the spacing between substrates, which are commonly kept distant to avoid electrical failures like partial discharge and dielectric breakdown. To this aim, many double-sided cooled assemblies were manufactured and then tested by monitoring the leakage current due to high voltages applied to the terminals. Two failure mechanisms are recognized and characterized. To provide an explanation of the counterintuitive measurement outcomes, 3-D FEM electrostatic simulations were performed on the power module samples in the COMSOL Multiphysics environment. [ABSTRACT FROM AUTHOR]