Search

In recent decades organic electronics has entered the mainstream of consumer electronics, driven by innovations in scalability and low power applications, and low-cost fabrication methods. The potential for using organic semiconductor electronic devices as radiation detectors, and in particular for neutron detection is reported. We report results of laboratory tests using α particles as well as the response to thermal and fast neutrons covering the energy range 0.025 eV to 16.5 MeV. GEANT4 simulations are used to provide a detailed understanding of the performance and potential of this emerging technology for radiation detection. [ABSTRACT FROM AUTHOR]

This is a review of the SuperB project, covering the accelerator, detector and highlights of the broad physics programme. SuperB is a flavour factory capable of performing precision measurements and searches for rare and forbidden decays of Bu, d, s, D, τ and ϒ(nS) particles. These results can be used to test fundamental symmetries and expectations of the standard model, and to constrain many different hypothesized types of new physics. In some cases, these measurements can be used to place constraints on the existence of light dark matter and light Higgs particles with masses below 10 GeV/c2. The potential impact of the measurements that will be made by SuperB on the field of high energy physics is also discussed in the context of data taken at both high energy in the region around the ϒ(4S) and near charm threshold. [ABSTRACT FROM AUTHOR]

In this study, both memcapacitive and memristive characteristics in the composite material based on the rhenium disulfide (ReS2) rich in rhenium (VI) oxide (ReO3) surface overlayer (ReO3@ReS2) and in the indium tin oxide (ITO)/ReO3@ReS2/aluminum (Al) device configuration is presented. Comprehensive experimental analysis of the ReO3@ReS2 material properties' dependence on the memcapacitor electrical characteristics was carried out by standard as well as frequency-dependent current–voltage, capacitance–voltage, and conductance–voltage studies. Furthermore, determination of the charge carrier conduction model, charge carrier mobility, density of the trap states, density of the available charge carrier, free-carrier concentration, effective density of states in the conduction band, activation energy of the carrier transport, as well as ion hopping was successfully conducted for the ReO3@ReS2 based on the experimental data. The ITO/ReO3@ReS2/Al charge carrier conduction was found to rely on the mixed electronic–ionic processes, involving electrochemical metallization and lattice oxygen atoms migration in response to the externally modulated electric field strength. The chemical potential generated by the electronic–ionic ITO/ReO3@ReS2/Al resistive memory cell non-equlibrium processes leads to the occurrence of the nanobattery effect. This finding supports the possibility of a nonvolatile memory cell with a new operation principle based on the potential read function. [ABSTRACT FROM AUTHOR]