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An intuitive model of classical guitar intonation is presented that includes the effects of the resonant length of the fretted string, linear mass density, tension, and bending stiffness. An expression is derived for the vibration frequencies of a stiff string using asymmetric boundary conditions at the saddle and the fret. Based on logarithmic frequency differences ("cents") that decouple these physical effects, Taylor series expansions are introduced that exhibit clearly the origins of frequency deviations of fretted notes from the corresponding 12-tone equal temperament (12-TET) values. A simple in situ technique is demonstrated for measurement of the changes in frequency of open strings arising from small adjustments in length, and a simple procedure is proposed that any interested guitarist can use to estimate the corresponding frequency shifts due to tension and bending stiffness for their own guitars and string sets. Based on these results, a least-squares fit method is employed to select values of saddle and nut setbacks that map fretted frequencies—for a particular string set and guitar—almost perfectly onto their 12-TET targets. A general approach to tempering an "off-the-shelf" guitar is shown to further reduce the tonal errors inherent in any fretted musical instrument. [ABSTRACT FROM AUTHOR]

Electromagnetically induced transparency (EIT) has often been proposed for generating nonlinear optical effects at the single photon level; in particular, as a means to effect a quantum non-demolition measurement of a single-photon field. Previous treatments have usually considered homogeneously broadened samples, but realizations in any medium will have to contend with inhomogeneous broadening. Here we reappraise an earlier scheme (Munro et al 2005 Phys. Rev. A 71 033819) with respect to inhomogeneities and show an alternative mode of operation that is preferred in an inhomogeneous environment. We further show the implications of these results on a potential implementation in diamond-containing nitrogen-vacancy colour centres. [ABSTRACT FROM AUTHOR]

We provide a broad outline of the requirements that should be met by components produced for a Quantum Information Technology (QIT) industry, and we identify electromagnetically induced transparency (EIT) as potentially key enabling science toward the goal of providing widely available few-qubit quantum information processing within the next decade. As a concrete example, we build on earlier work and discuss the implementation of a two-photon controlled phase gate (and, briefly, a one-photon phase gate) using the approximate Kerr nonlinearity provided by KIT. In this paper, we rigorously analyze the dependence of the performance of these gates on atomic dephasing and field detuning and intensity, and we calculate the optimum parameters needed to apply a π phase shift in a gate of a given fidelity. Although high-fidelity gate operation will be difficult to achieve with realistic system dephasing rates, the moderate fidelities that we believe will he needed for few-qubit QIT seem much more obtainable. [ABSTRACT FROM AUTHOR]

We develop a theoretical framework for the exploration of quantum mechanical coherent population transfer phenomena, with the ultimate goal of constructing faithful models of devices for classical and quantum information processing applications. We begin by outlining a general formalism for weak-field quantum optics in the Schrödinger picture, and we include a general phenomenological representation of Lindblad decoherence mechanisms. We use this formalism to describe the interaction of a single stationary multilevel atom with one or more propagating classical or quantum laser fields, and we describe in detail several manifestations and applications of electromagnetically induced transparency. In addition to providing a clear description of the nonlinear optical characteristics of electromagnetically transparent systems that lead to 'ultraslow light', we verify that--in principle--a multi-particle atomic or molecular system could be used as either a low power optical switch or a quantum phase shifter. However, we demonstrate that the presence of significant dephasing effects destroys the induced transparency, and that increasing the number of particles weakly interacting with the probe field only reduces the nonlinearity further. Finally, a detailed calculation of the relative quantum phase induced by a system of atoms on a superposition of spatially distinct Fock states predicts that a significant quasi-Kerr nonlinearity and a low entropy cannot be simultaneously achieved in the presence of arbitrary spontaneous emission rates. Within our model, we identify the constraints that need to be met for this system to act as a one-qubit and a two-qubit conditional phase gate. [ABSTRACT FROM AUTHOR]

This work reports on a systematic investigation of the frequency comb enhancement in hybrid InAs/GaAs multisection quantum dot lasers on silicon. The colliding configuration provides an operating frequency at twice the fundamental frequency of the free-spectral range of the cold cavity. In particular, the contribution of the linewidth enhancement factor, or αH-factor, on the comb formation is investigated with respect to the reverse voltage and temperature conditions. When those parameters are varied, the formation of the combs is found to increase with respect to αH. In addition, we also demonstrate that this quantum dot laser exhibits a comb behavior, while the beatnote locking is not fully achieved. This effect is essentially due to the dispersion which is not fully compensated from the optical nonlinearities. These results bring further insights on comb and pulse formations in multisection quantum dot lasers, which is important for designing future light sources for on-chip and chip-to-chip optical interconnects. [ABSTRACT FROM AUTHOR]

Silicon nanophotonics holds the promise of dramatically advancing the state of the art in computing by enabling parallel architectures that combine unprecedented performance and ease of use with affordable power consumption. This paper presents a design study for a many-core architecture called Corona which utilizes dense wavelength division multiplexing (DWDM) for on- and off-chip communication together with the devices which will be needed to implement such a communication infrastructure. [ABSTRACT FROM AUTHOR]

The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV-/NV0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count. [ABSTRACT FROM AUTHOR]

We demonstrate a method to create nitrogen-vacancy (NV) centers in diamond using focused helium ion microscopy. Near-surface NV centers can be created with spatial resolution below 0.6 μm. We studied the density, creation efficiency, and spectral linewidths at optical and microwave frequencies for NV centers produced using various helium ion implantation doses. The optical linewidths are narrower than those of similar nitrogen-vacancy centers produced using nitrogen ion implantation. [ABSTRACT FROM AUTHOR]

We use electromagnetically induced transparency (EIT) to probe the narrow electron-spin resonance of nitrogen-vacancy centers in diamond. Working with a multipass diamond chip at temperatures 6-30 K, the zero-phonon absorption line (637 nm) exhibits an optical depth of 6 and inhomogeneous linewidth of ~30 GHz FWHM. Simultaneous optical excitation at two frequencies separated by the ground-state zero-field splitting (2.88 GHz) reveals EIT resonances with a contrast exceeding 6% and FWHM down to 0.4 MHz. The resonances provide an all-optical probe of external electric and magnetic fields with a projected photon-shot-noise-limited sensitivity of 0.2 V/cm/√Hz and 0.1 nT/√Hz, respectively. Operation of a prototype diamond-EIT magnetometer measures a noise floor of ≤ nT/√Hz for frequencies above 10 Hz and Allan deviation of 1.3 ± 1.1 nT for 100 s intervals. The results demonstrate the potential of diamond-EIT devices for applications ranging from quantum-optical memory to precision measurement and tests of fundamental physics. [ABSTRACT FROM AUTHOR]

The negatively charged nitrogen-vacancy (NV-) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically <0.5%) incoϕorated during homoepitaxial diamond growth by chemical vapor deposition (CVD) is in the form of undecorated NV- centers. Furthermore, studies on CVD diamond grown on (llO)-oriented substrates show a near 100% preferential orientation of NV centers along only the [111] and [&1macr;&1macr;1] directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the NVH- is similarly preferentially oriented, but it is not possible to determine whether this defect was formed by Η capture at a preferentially aligned NV center or as a complete unit. Reducing the number of NV orientations from four orientations to two orientations should lead to increased optically detected magnetic resonance contrast and thus improved magnetic sensitivity in ensemble-based magnetometry. [ABSTRACT FROM AUTHOR]

We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located S 100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transitions. Under resonant excitation, we apply dynamic feedback to stabilize the ZPL frequency. The transition is locked over several minutes and drifts of the peak position on timescales ä 100 ms are reduced to a fraction of the single-scan linewidth, with standard deviation as low as 16 MHz (obtained for an NV in bulk, ultrapure diamond). These techniques should improve the entanglement success probability in quantum communications protocols. [ABSTRACT FROM AUTHOR]

We show reduction in the emission from nitrogen-vacancy (NV) centers in single crystal diamond due to exposure to hydrogen plasmas ranging from 700 °C to 1000 °C. Significant fluorescence reduction was observed beneath the exposed surface to 80 μm depth after ∼10 min and did not recover after post-annealing in vacuum for 7 h at 1100 °C. We attribute the fluorescence reduction to the formation of nitrogen-vacancy-hydrogen centers by the plasma-induced diffusion of hydrogen. These results have important implications for the formation of NV centers for quantum applications, whilst also providing experimental evidence of long range hydrogen diffusion through intrinsic high-purity diamond. [ABSTRACT FROM AUTHOR]

The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 °C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications. [ABSTRACT FROM AUTHOR]

The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful in realizing coupled microcavity-NV devices for quantum information processing in diamond. [ABSTRACT FROM AUTHOR]