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In this research, different amounts of Ce-doped ZnO thin films were synthesized using the spray pyrolysis method. Structural, morphological and optical properties of these synthesized films were investigated. In XRD analyses, wurtzite (hexagonal) structures were observed in the films. In SEM analysis, there were changes in the surface morphology of the films with doping, and in cross-section measurement, the thickness of the films was measured to be approximately 1.2 μm. In UV–vis spectrometry analysis, it is seen that the effect of Cerium contribution on optical transmittance and band gap positively affects shielding. NaI(Tl) detector and gamma energies of 384, 1173, and 1333 keV have been used to investigate the radiation protection properties of these synthesized films. As a result of these measurements, linear attenuation coefficient (LAC) values have been obtained. Radiation shielding parameters have been calculated with these (LAC) values. The Mass Attenuation Coefficient (MAC), Half Value Layer (HVL), Tenth Value Layer TVL (and) Mean Free Path (MFP) values have been also calculated using this LAC result. According to these results, Ce-doped ZnO films were found to be effective in radiation shielding. • In this article, the effect of cerium doping ratio to ZnO on radiation shielding was examined. • Thin films were produced using the spray pyrolysis technique. • In experiments on radiation shielding properties, 133Ba 384 keV, 60Co 1173 keV and 60Co 1333 keV energy gamma rays were used. • It was determined that the increase in the Cerium rate had a positive effect on radiation shielding. • It was observed that cerium doping affected the energy band gap. [ABSTRACT FROM AUTHOR]

In this research work, a simple spray pyrolysis method was employed to synthesized gadolinium (Gd) doped titanium oxide (TiO2) thin film. The crystal structure and morphology of the sample was characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). According to XRD measurements, no apparent crystal peak was observed. The thickness of the prepared film was found to be 228 nm from SEM observation. The optical transmittance and bandgap energy of the synthesized thin film was investigated by using UV-Vis spectroscopy. The high transmission of the thin film was found in the visible region. The optical bandgap energy of the prepared film was found to be 2.85 eV. The photocatalytic degradation of malachite green solution was studied. As a result of the photocatalytic experiment, the thin film could be used as an effective photocatalyst for malachite green dye. [ABSTRACT FROM AUTHOR]

Boron doped vanadium thin films were fabricated on the micro-slide glass substrates by spray pyrolysis technique at substrate temperature of 400°C. Initially, 0.1 M vanadium(III) chloride (VCl3) solution was prepared in ethanol: water mixture (1: 4) solvent. To prepare the boron doped vanadium oxide films as the concentrations of 2, 5, 7, 10, 20%, the suitable amount of H3BO3 was added in 0.1 M VCl3 solution for each of the samples. X-Ray diffraction experiment with the produced films showed that tetragonal β-V2O5 phases formed. The synthesized boron-doped V2O5 thin films having the large surface area demonstrated the efficient catalytic properties in the photocatalytic degradation of methyl blue in water samples under Xenon light. The photocatalytic reaction efficiency was measured by recording the decrease of absorbance at 590 nm in UV-Vis absorption spectra. The methyl blue dye was degradated in approximately 30 min. The photocatalytic experiment results of the produced thin films showed that boron doping amount positively effects the degradation efficiency and reaction time. [ABSTRACT FROM AUTHOR]

In recent years, the production of alternative materials instead of lead in the environmentally sensitive and non-toxic material research in radiation shielding has been gained importance. In this study, transparent pristine and boron (B) doped zinc oxide (ZnO) thin films were synthesized by spray pyrolysis method. The crystalline structure, morphology and optical properties of the produced films were investigated with X-ray diffractometer (XRD), scanning electron microcopy (SEM) and Uv–vis spectrometer. The wurtzite structure of pure ZnO was deformed by boron doping found from XRD results. The hexagonal rods have been worsened with boron doping observed from SEM analysis. The factors related to radiation shielding; mass and linear attenuation coefficients, half value layer, mean free path and tenth value layer of different percentage (5, 10 and 20%) B doped ZnO thin films were examined. To perform these measurements, PTW® electron detector and irradiation have been utilized with 6 MeV energized electrons by using VARIAN®. The obtained results from these measurements can be useful to understanding of radiation shielding performance of ZnO:B thin films. • Pristine and boron doped zinc oxide thin films were synthesized by pyrolysis methods. • Optical transmittance of the prepared films were enhanced as a function of boron concentration. • The linear attenuation coefficient increased as the percentage of boron in the thin films increased. • ZnO: B thin films can be used as radiation shielding with different materials in radiation treatment centers. [ABSTRACT FROM AUTHOR]