1. Formation of inhomogeneous micro-scale pores attributed ultralow κlat and concurrent enhancement of thermoelectric performance in p-type Bi0.5Sb1.5Te3 alloys.
- Author
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Nagarjuna, Cheenepalli, Dharmaiah, Peyala, Lee, Jong-Hyeon, Kim, Ki Buem, Song, Gian, Lee, Jin Kyu, and Hong, Soon-Jik
- Subjects
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PHONON scattering , *THERMOELECTRIC materials , *ZONE melting , *THERMAL conductivity , *THERMOELECTRIC effects , *ELECTRIC conductivity - Abstract
• Fabricated porous structure in p-type Cu 0.07 Bi 0.5 Sb 1.5 Te 3 compounds by assisting PVA as pore former and studied TE properties. • Lattice thermal conductivity effectively decreased by ~ 38% due to intensified phonon scattering at microscale pores. • The maximum ZT of 1.342 at 400 K and η max of ~ 9.4% at ∆T = 200 K was obtained for the sample with porosity of 10.58%. • The hardness and compressive strength of porous bulks show significantly higher than commercial zone melting materials. [Display omitted] In the background of enhancing thermoelectric (TE) figure of merit of solid-state materials, the introduction of porous structure can significantly decrease lattice thermal conductivity by intensifying phonon scattering at the inhomogeneous microscale pores. Herein, we developed a porous structure in Cu 0.07 Bi 0.5 Sb 1.5 Te 3 compounds by utilizing PVA as the pore former, and systematically studied its effect on thermoelectric properties. The results revealed that the reduction in thermal conductivity (~28%) was greater than the decrease in electrical conductivity (~17%) with increasing porosity, indicating long-wavelength phonon scattering was enhanced at micro-scale pores. Consequently, a peak zT of 1.342 at 400 K, and a zT avg of 1.254 in the temperature range of 300–500 K and an η max of ~9.4% at ΔT = 200 K were achieved in the porous sample (10.58%), which all are higher than that of dense sample. The hardness and compressive strength of the porous samples were significantly higher than commercial zone melting ingots. The proposed methodology is a cost-effective and efficient way of producing high-performance TE devices with good mechanical stability for real life practical applications. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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