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Highlights: [•] Recovery property of the device parameters under step-stress is investigated. [•] The maximum output current can recover almost completely after stress. [•] Recovery property can be explained by the trapping and de-trapping procedures. [•] The de-trapping activation energy was evaluated to be 0.30eV. [•] No pits or cracks under the gate contact were found after stress. [Copyright &y& Elsevier]

We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm2/V·s, sheet carrier density improved from 0.87×1013 to 1.15×1013 cm−2, edge dislocation density reduced from 2.4×109 to 1.3×109 cm−2, saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V. [ABSTRACT FROM AUTHOR]