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This paper presents a new average electrothermal model of the inductor dedicated to the computer analysis of dc–dc converters, such as a boost converter. The proposed model takes into account the influence of power losses in the ferromagnetic core on frequency and temperature. The considered model includes parameters, values of which are estimated on the basis of the catalog data of the inductor components—the core and the winding. To prove the usefulness of the average electrothermal model of the inductor, calculations of the characteristics of the boost converter are performed. The results of calculations are compared with the results of measurements and the good agreement between these results is achieved for two types of ferromagnetic cores made of powdered iron or ferrite. [ABSTRACT FROM AUTHOR]

The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006). The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a twoway coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the resultsWe present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a largearea semiconductor device, as well as numerical solutions obtained using the finite element method [ABSTRACT FROM AUTHOR]