1. Large stable strain memory effect in poled Mn-doped Pb(Mn1/3Sb2/3)O3-Pb(Zr,Ti)O3 ceramics.
- Author
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Du, Gang, Liang, Ruihong, Wang, Li, Li, Kui, Zhang, Wenbin, Wang, Genshui, and Dong, Xianlin
- Subjects
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PIEZOELECTRIC ceramics , *PIEZOELECTRIC actuators , *HYSTERESIS , *ELECTRIC fields , *FIELD-effect transistors , *LEAD zirconate titanate - Abstract
Large strain memory effect was confirmed in the poled and aged Mn-doped 0.05Pb(Mn1/3Sb2/3)O3-0.50PbZrO3-0.45PbTiO3 ceramics due to the presence of asymmetric strain hysteresis curve with two stable strain states at zero electric field. This strain memory is two times larger than that of the unipolar strain output. Moreover, the large strain memory effect is quite stable at high electric field or down to 0.01 Hz and shows good stability even after 20 000 fatigue cycles. These results indicate that strain memory piezoelectric actuator, which could keep its output strain without any operating fields, may be fabricated using this kind of material. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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