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Low texture spreads of single‐crystalline‐like materials are critical for high performance of low‐cost flexible semiconductors and second‐generation high‐temperature superconductors based on metal foils. For texture improvement, a single‐crystalline‐like Ag film is epitaxially grown on an ion‐beam‐assisted deposition TiN substrate using magnetron sputtering. Ultra‐low texture spreads are found in the thin Ag film (∼330 nm), with an out‐of‐plane texture spread (Δω) of ∼1.03° and an in‐plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single‐crystalline‐like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single‐crystalline‐like Ag films with various thicknesses. [ABSTRACT FROM AUTHOR]