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We analyzed the transport of ballistic electrons through organic molecules on uniformly flat surfaces of bismuth grown on silicon. For the fullerene C60 and for a planar organic molecule (3,4,9, 10-perylene-tetracarboxylic acid dianhydride), the signals revealed characteristic submolecular patterns that indicated where ballistic transport was enhanced or attenuated. The transport was associated to specific electronic molecular states. At electron energies of a few electron volts, this "scanning near-field electron transmission microscopy" method could be applied to various adsorbates or thin layers. [ABSTRACT FROM AUTHOR]

In this work we report on the growth of high quality bismuth films with a layer thickness of 3-4 nm on a (100)-oriented silicon surface. We present a combined STM and LEED study to determine the best possible growth conditions regarding, for example, film flatness, grain size and low surface roughness. The deposition of bismuth was performed at a low temperature of about 130 K followed by moderate annealing to an ambient temperature or to temperatures slightly above. The result is an epitaxial Bi film with low surface roughness. [ABSTRACT FROM AUTHOR]