1. Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure.
- Author
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Romanov, V. V., Ivanov, E. V., and Moiseev, K. D.
- Subjects
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SEMICONDUCTORS , *HETEROJUNCTIONS , *ENERGY bands , *ELECTROLUMINESCENCE , *ANTIMONIDES , *EPITAXY - Abstract
We report on the electroluminescent and I–V characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by metalorganic vapor-phase epitaxy. In the spectral range of 0.23–0.29 eV, the high-intensity electroluminescence at a temperature of T = 77 K has been observed. The position of the maximum of the main emission band ( ~ 0.24 eV) has shown a noticeable blue shift with increasing forward bias. Based on the investigations, a conclusion about the existence of a type-II staggered heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface has been drawn, which is confirmed by the calculated energy band diagram. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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