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Silicon nano-wires (SiNWs) with diameter of ∼30 nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080°C for 1 h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfide-assisted growth model of SiNWs was suggested. [Copyright &y& Elsevier]

Abstract: Crystalline boron oxide nanowires have been synthesized on silicon substrates by chemical vapor deposition (CVD) process without the use of catalysts or templates. It is pointed out that the boron oxide nanowires are cubic and single crystalline, and the diameter of the nanowires is in the range of 20–. Some of the nanowires branched, and the diameters of the branches and stems of the branched boron oxide nanowires are in the range of 20–80 and 100–, respectively. The crystallinity, morphology, and structure features of the as-prepared boron oxide nanowires were investigated by field emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and selected area electron diffraction. Furthermore, Raman spectrum and Fourier transform infrared spectroscopy of the nanowires were also investigated. [Copyright &y& Elsevier]