Search

In this work, we grew Bi4Ge3O12 (BGO) crystals of two types by Bridgmen–Stockbarger technology in different temperature gradients and compared their optical transmissions and energy resolutions before and after ultraviolet irradiation. It was found that the optical transmissions and energy resolutions of the two types of BGO crystals are similar before UV-irradiation. After UV-irradiation, the optical transmissions at 480 nm of the first type of BGO crystals which were grown in higher temperature gradient cut down about 20% and their energy resolutions obviously deteriorated from about 12–18%. But the optical transmissions and energy resolutions of the second type of BGO crystals which were grown in lower temperature gradient keep unchanged on the whole. After 250 °C/4 h annealing, the optical transmissions and energy resolutions of the second type of BGO crystals can be completely recovered, whereas the optical transmissions and energy resolutions of the first type of BGO crystals cannot be completely recovered until through 600 °C/8 h annealing. The reason for the difference between the first and second type of BGO crystals is discussed. [Copyright &y& Elsevier]

Owing to their many intriguing properties, transparent metal oxide semiconductors have become the most attractive alternatives for silicon-based semiconductors widely used today and been widely investigated by researchers. However, most of high performance metal oxide thin film transistor (TFT) relied on vacuum processing equipment and expensive rare element indium in the manufacturing process, the need for developing low cost indium-free metal oxide TFT has become urgent. In this work, a bilayer TFT composed of ZnO nanoparticles (NPs)/SnO 2 was prepared by solution method. In this device structure, SnO 2 film can provide high conductivity and carrier mobility, while the ZnO NPs in the upper layer can modulate and control channel conductance and further protect SnO 2 film from air environment. The obtained device exhibits the excellent performances including μ FE of 22.9 cm2V−1s−1 and I on /I off about 1 × 107, subthreshold swing (SS) value about 0.36 V dec−1, and excellent environmental stability have been effectively achieved. Furthermore, the performance enhancement mechanism for the bilayer transistor with the help of simulation and related experiments was further explored. The bilayer ZnO NPs/SnO 2 TFT has great cost advantage compared with indium based metal oxide TFTs and exhibits excellent potential in low cost thin-film electronic devices. [Display omitted] • The indium free thin film transistor was prepared by solution method with a high on/off current ratio, a small sub-threshold swing. • The trap density and conductivity of bilayer channel were greatly reduced, and the bilayer transistor exhibited low cut-off current and good stability. • Based on the device structure of the bilayer transistor, TCAD simulation was used to investigate the position of the conductive channel. [ABSTRACT FROM AUTHOR]