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8 results on '"Montesi L."'

5. Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices.

Author

Mehonic, A., Munde, M.S., Ng, W.H., Buckwell, M., Montesi, L., Bosman, M., Shluger, A.L., and Kenyon, A.J.

Subjects
*INTRINSIC semiconductors, *AMORPHOUS silicon, *RANDOM access memory, *ELECTRIC potential, *SWITCHING circuits
Abstract

In this paper, we present a study of intrinsic bipolar resistance switching in metal-oxide-metal silicon oxide ReRAM devices. Devices exhibit low electroforming voltages (typically − 2.6 V), low switching voltages (± 1 V for setting and resetting), excellent endurance of > 107 switching cycles, good state retention (at room temperature and after 1 h at 260 °C), and narrow distributions of switching voltages and resistance states. We analyse the microstructure of amorphous silicon oxide films and postulate that columnar growth, which results from sputter-deposition of the oxide on rough surfaces, enhances resistance switching behavior. [ABSTRACT FROM AUTHOR]

Published
2017
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