1. InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
- Author
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Lin, Hsien-Cheng, Lee, Fang-Ming, Cheng, Yu-Chun, Lee, Kuan-Wei, Adriyanto, Feri, and Wang, Yeong-Her
- Subjects
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METAL oxide semiconductors , *DIELECTRICS , *NANOCHEMISTRY , *ELECTRIC conductivity , *ELECTRIC breakdown , *MODULATION-doped field-effect transistors , *LIQUID-liquid interfaces - Abstract
Abstract: InGaP/InGaAs metal–oxide–semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale liquid phase-oxidized InGaP as the gate dielectric is demonstrated. Not only does the MOS-PHEMT have the advantages of the MOS structure, but it also has high-carrier density and a high-mobility 2DEG channel. Using selective oxidation of InGaP by liquid phase oxidation, the MOS-PHEMT can be fabricated without additional recess processes. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cut-off frequency, lower minimum noise figure, and higher power-added efficiency than does its counterpart (reference PHEMT). The interface roughness effect on the DC and RF performance of devices is also discussed. [Copyright &y& Elsevier]
- Published
- 2012
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