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Surface morphology study of Zinc Oxide (ZnO) thin films by using Thermal Chemical Vapor Deposition (Thermal-CVD) was investigated. The ZnO compound was synthesized from zinc acetate dehydrate which act as a starting material to form the ZnO thin films. It was deposited on as-prepared Nanonstructured Silicon (NSi) with deposition temperature ranging from 400–600° C without catalyst-assisted. The surface morphology of the samples before and after the deposition process was examined by using Analytical Scanning Electron Microscope (SEM). The result shows that the obtained ZnO thin films possess good crystalline structure at deposition temperature of 600° C and the surface morphologies of the ZnO thin films improved greatly with an increase in deposition temperature. XRD was employed to study the evolution of the crystalline orientation using X-Ray Diffractrometer (XRD). [ABSTRACT FROM AUTHOR]

Mechanism of doping of Mg in GaN thin film grown on c-plane sapphire substrate by plasma assisted-metalorganic chemical vapor deposition (PA-MOCVD) method have been investigated. The growth was carried out at temperature of 680 °C, which flow rate of Cp2Mg as dopant source was varied of 0.003; 0.006; 0.009 and 0.012 sccm. The Van der Pauw technique, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to characterize their electric, crystallographic and morphology properties. Hole concentrations of up to 1019 cm-3 have been observed for Mg-doped GaN films without any post-growth annealing. The XRD analysis showed change of the FWHMs for the (0002) orientation plane from Mg-doped GaN films. The difference of the atomic radius between Ga and Mg atoms causes lattice distortion in crystal. This lattice distortion generates dislocation and causes growth of the layer to be three-dimensional as showed on SEM images. [ABSTRACT FROM AUTHOR]