1. Electrothermal Simulation of Large-Area Semiconductor Devices.
- Author
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Kirsch, C., Altazin, S., Hiestand, R., Beierlein, T., Ferrini, R., Offermans, T., Penninck, L., and Ruhstaller, B.
- Subjects
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SEMICONDUCTOR devices , *SEMICONDUCTOR thin films , *ELECTRIC charge , *LIGHT emitting diodes , *ELECTRIC loss in electric power systems , *SIMULATION methods & models , *THERMAL properties - Abstract
The lateral charge transport in thin-film semiconductor devices is affected by the sheet resistance of the various layers. This may lead to a non-uniform current distribution across a large-area device resulting in inhomogeneous luminance, for example, as observed in organic light-emitting diodes (Neyts et al., 2006). The resistive loss in electrical energy is converted into thermal energy via Joule heating, which results in a temperature increase inside the device. On the other hand, the charge transport properties of the device materials are also temperature-dependent, such that we are facing a twoway coupled electrothermal problem. It has been demonstrated that adding thermal effects to an electrical model significantly changes the resultsWe present a mathematical model for the steady-state distribution of the electric potential and of the temperature across one electrode of a largearea semiconductor device, as well as numerical solutions obtained using the finite element method [ABSTRACT FROM AUTHOR]
- Published
- 2017
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