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Reports that a highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. Ability of the uncoated broad-area laser to demonstrate 1.292 micron pulsed operation with a low threshold current density of 300 A/cm2; Spontaneous emission of the laser; Observation that the Auger recombination component dominates the threshold current at high temperature.

In(Ga)As/GaAs quantum-dot (QD) lasers with emission wavelength at 1295 nm at room temperature are fabricated. The laser active region contains a threefold stack of QD layers with surface dot density of 4.56 × 1010 cm-2. The laser structure is aluminum-free with InGaP as cladding layers. Threshold current density of a narrow stripe laser of 8 µm wide and 3.5 mm long is 152.5 A/cm2. The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz due to the small damping factor. From the above measurement, the differential gain and gain compression factor were extracted to be 4.3 × 10-16 cm2 and 3.4 × 10-17 cm3, respectively. Using these parameters, the maximum modulation bandwidthf3 dB max is estimated as 7.9 GHz. [ABSTRACT FROM AUTHOR]