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Silicon nano-wires (SiNWs) with diameter of ∼30 nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080°C for 1 h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfide-assisted growth model of SiNWs was suggested. [Copyright &y& Elsevier]

Tiny SiO2 nano-wires (SiO2-NWs) were synthesized on a p-Si (1 1 1) wafer by the chemical-vapor-deposition method. The minimum diameter of the nano-wires was around 9 nm, and the length was longer than 10 μm. The results of transmission electron microscopy shows that the amorphous nano-wires were composed of Si and O with an approximate atomic ratio of 1:2. Furthermore, the photoluminescence behavior of the SiO2-NWs has been also checked. [Copyright &y& Elsevier]

Abstract: Crystalline boron oxide nanowires have been synthesized on silicon substrates by chemical vapor deposition (CVD) process without the use of catalysts or templates. It is pointed out that the boron oxide nanowires are cubic and single crystalline, and the diameter of the nanowires is in the range of 20–. Some of the nanowires branched, and the diameters of the branches and stems of the branched boron oxide nanowires are in the range of 20–80 and 100–, respectively. The crystallinity, morphology, and structure features of the as-prepared boron oxide nanowires were investigated by field emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and selected area electron diffraction. Furthermore, Raman spectrum and Fourier transform infrared spectroscopy of the nanowires were also investigated. [Copyright &y& Elsevier]