1. Demonstrating 1 nm-oxide-equivalentthickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor.
- Author
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Wen-Hao Wu, Yueh-Chin Lin, Tzu-Ching Hou, Tai-Wei Lin, Hisang-Hua Hsu, Yuen-Yee Wong, Hiroshi Iwai, Kuniyuki Kakushima, and Edward Yi Chang
- Subjects
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METAL oxide semiconductor capacitors , *X-ray photoelectron spectroscopy , *TRANSMISSION electron microscopy , *DIELECTRIC materials , *ELECTRONIC structure , *COMPOSITE materials - Abstract
The use of a high k composite dielectric composed of La2O3 and HfO2 layers as the gate dielectric for In0.53Ga0.47As MOS application is proposed. Two multi-layer structures of La2O3 (1 nm)/HfO2 (1 nm) and La2O3 (0.5 nm)/HfO2 (0.5 nm) were deposited and annealed at 450 and 500°C for device performance comparison. X-ray photoelectron spectroscopy, TEM and C-V measurements were used for the interface analysis between the oxide and the semiconductor. Finally, a 1 nm equivalent-oxide-thickness dielectric with small hysteresis of 88 mV and Dit of 1.9 × 1012 cm-2 eV-1 was achieved for six layers of an La2O3 (0.5 nm)/HfO2 (0.5 nm) composite oxide structure on an In0.53Ga0.47As MOS capacitor with a post-deposition annealing temperature of 450°C. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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