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The n+-InAs/n0-InAs1 –ySby/p-InAsSbP heterostructures with asymmetric band offsets at the heteroboundaries of the active region have been grown by vapor-phase epitaxy from organometallic compounds on InAs substrates. The forward branch of the current–voltage characteristics of the obtained heterostructures at low temperatures has segments with the tunneling conduction. The energy-band diagram of the double InAs/InAs1 –ySby/InAsSbP heterostructure is calculated in the range of compositions (y < 0.2) of the narrow-gap active region. The InAs1 –ySby/InAsSbP heterojunction is shown to be a II type heterojunction in this composition range. The electroluminescence observed in the experiment for the n+-InAs/n0-InAs1 ‒ySby/p-InAsSbP heterostructures with the active region in compositions y > 0.14 is due to interface radiative transitions with participation of localized hole states at the II type heteroboundary. [ABSTRACT FROM AUTHOR]

We report on the electroluminescent and I–V characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by metalorganic vapor-phase epitaxy. In the spectral range of 0.23–0.29 eV, the high-intensity electroluminescence at a temperature of T = 77 K has been observed. The position of the maximum of the main emission band ( ~ 0.24 eV) has shown a noticeable blue shift with increasing forward bias. Based on the investigations, a conclusion about the existence of a type-II staggered heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface has been drawn, which is confirmed by the calculated energy band diagram. [ABSTRACT FROM AUTHOR]