1. Parallel field magnetoresistance in topological insulator thin films.
- Author
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Lin, C. J., He, X. Y., Liao, J., Wang, X. X., Sacksteder IV, V., Yang,, W. M., Guan, T., Zhang, Q. M., Gu, L., Zhang, G. Y., Zeng, C. G., Dai, X., Wu, K. H., and Li, Y. Q.
- Subjects
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TOPOLOGICAL insulators , *THIN films , *MAGNETORESISTANCE , *MAGNETIC fields , *COHERENCE (Physics) - Abstract
We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2 Se3 and (Bi1-xSbx)2Te3 thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the TI thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The β parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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