1. Granularity Controlled Nonsaturating Linear Magnetoresistancein Topological Insulator Bi2Te3Films.
- Author
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Wang, Z. H., Yang, L., Li, X. J., Zhao, X. T., Wang, H. L., Zhang, Z. D., and Gao, Xuan P. A.
- Subjects
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MAGNETORESISTANCE , *TOPOLOGY , *ELECTRIC insulators & insulation , *BISMUTH telluride films , *CHEMICAL vapor deposition , *SEMICONDUCTOR materials , *BAND gaps - Abstract
We report on the magnetotransportproperties of chemical vapordeposition grown films of interconnected Bi2Te3nanoplates. Similar to many other topological insulator (TI) materials,these granular Bi2Te3films exhibit a linearmagnetoresistance (LMR) effect which has received much recent attention.Studying samples with different degree of granularity, we find a universalcorrelation between the magnitude of the LMR and the average mobility(â¨Î¼â©) of the films over nearly 2 orders of magnitudechange of â¨Î¼â©. The granularity controlled LMReffect here is attributed to the mobility fluctuation induced classicalLMR according to the ParishâLittlewood theory. These findingshave implications to both the fundamental understanding and magnetoresistivedevice applications of TI and small bandgap semiconductor materials. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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