1. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions.
- Author
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Liu, Zheng, Feng, Zhang, Sheng-Bei, Liu, Lin, Dong, Xing-Fang, Liu, Zhong-Chao, Fan, Bin, Liu, Guo-Guo, Yan, Lei, Wang, Wan-Shun, Zhao, Guo-Sheng, Sun, Zhi, He, and Fu-Hua, Yang
- Subjects
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SCHOTTKY barrier , *SCHOTTKY barrier diodes , *DIODES , *METALS , *ANNEALING of metals , *ELECTRIC potential - Abstract
4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm2 with a total active area of 2.46 × 10−3 cm2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10−5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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