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Intense mid-infrared (λ∼2 μm) room temperature electroluminescence from metal organic vapor phase epitaxy (MOVPE) grown type-I single AlSb/InAsSb/AlSb quantum wells (QWs) is reported. The spectral position of the electroluminescent peaks is in good agreement with k·p envelope function calculation in the frame of four-band Kane’s model taking into account the intermixing of s and p states in the deep quantum well. A four times increase of the emission intensity with temperature increasing from 77 to 300 K can be explained by highly efficient radiative recombination of the electrons injected into the narrow AlSb/InAsSb/AlSb QW due to its specific design, leading to Auger process suppression. [ABSTRACT FROM AUTHOR]

A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III-V part) and CdMgSe/CdSe (as a II-VI part), has been proposed as a basic element of a midinfrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy and has exhibited an intense long-wavelength electroluminescence at 3.12 μm (300 K). A less than 10 times reduction of electroluminescence intensity from 77 to 300 K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as ΔE[sub C]=1.28 eV and ΔE[sub V]∼1.6 eV. The type of band lineups at a coherent InAs/Cd[sub 1-x]Mg[sub x]Se interface is discussed for 0≤x≤0.15. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]