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1. Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations.

Author

Ge, Jun, Remiens, Denis, Costecalde, Jean, Chen, Ying, Dong, Xianlin, and Wang, Genshui

Subjects
*RESIDUAL stresses, *ENERGY storage, *ANTIFERROELECTRIC materials, *THIN films, *LEAD compounds, *SILICON compounds, *ELECTRIC fields
Abstract

The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations. [ABSTRACT FROM AUTHOR]

Published
2013
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